Molecular Graphene (MG) of a physical size and bonding character that render the molecule suitable as a channel material in an electronic device, such as a tunnel field effect transistor (TFET). The molecular graphene may be a large polycyclic aromatic hydrocarbon (PAH) employed as a discrete element, or as a repeat unit, within an active or passive electronic device. In some embodiments, a functionalized PAH is disposed over a substrate surface and extending between a plurality of through-substrate vias. Heterogeneous surfaces on the substrate are employed to direct deposition of the functionalized PAH molecule to surface sites interstitial to the array of vias. Vias may be backfilled with conductive material as self-aligned source/drain contacts. Directed self-assembly techniques may be employed to form local interconnect lines coupled to the conductive via material. In some embodiments, graphene-based interconnects comprising a linear array of PAH molecules are formed over a substrate.

Structures for an optoelectronic memory and related fabrication methods. A metal oxide layer is located on an interlayer dielectric layer. A layer composed of a donor/acceptor dye is positioned on a portion of the first layer.

The application relates to a strongly-polarized molecule of the following general formula: wherein A denotes a group having a polarizability greater than 2 C.Math.m.sup.2/V; R.sub.1 and R.sub.2 are respectively hydrogen, halogen, a hydroxyl group, an amino group, a cyano group, a nitro group, a carboxyl group, a C.sub.1-12 alkyl group, a C.sub.1-12 alkoxy group, a halogenated C.sub.1-12 alkyl group, a halogenated C.sub.1-12 alkoxy group, a hydroxyl C.sub.1-12 alkyl group, a hydroxyl C.sub.1-12 alkoxy group, or a C.sub.1-12 alkyl amino group; x.sub.1 and x.sub.2 denote 0 or an integer no less than 1, respectively; and y.sub.1 and y.sub.2 denote 0 or an integer no less than 1, respectively. The application further relates to a strongly-polarized molecule-graphene molecule heterojunction, and a single molecule field effect transistor comprising a substrate, a gate, a dielectric layer and the strongly-polarized molecule-graphene molecule heterojunction; and the dielectric layer is located between the gate and the strongly-polarized molecule-graphene molecule heterojuction. The single molecule field effect transistor provided by the application can realize highly-efficient gate modulation.

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A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

A nanogap electrode in an embodiment according to the present invention includes a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, and a second electrode including a second electrode layer and a second metal particle arranged at one end of the second electrode layer. The first metal particle and the second metal particle are arranged opposite to each other with a gap therebetween, and a width from one end to the other end of the first metal particle and the second metal particle is 20 nm or less. The gap between the first metal particle and the second metal particle is 10 nm or less.

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a -conjugated molecule having a -conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the -conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

Disclosed herein is a compound of formula (I):

[M(L).sub.n].sup.m+(A.sup.y).sub.z(I)

where A, M, L, n, m, y and z are as defined herein, which can be used in the formation of a resistive memory device. Also disclosed herein are methods of manufacturing such devices and their uses.

A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

A reconfigurable polar molecule includes a symmetric nonpolar molecule portion having an elongated shape defined by a longitudinal axis and lateral axis, the longitudinal axis being longer than the lateral axis; a positive ionically charged group at a first end and a negative ionically charged group at a second end of the longitudinal axis, the positive and negative ionically charged groups forming a permanent dipole; a first bridging group and a second bridging group on opposing ends of the lateral axis, the first and second bridging groups being linear nonpolar groups; and a first support portion bonded to the first bridging group, and a second support portion bonded to the second bridging group, the first bridging group and the second bridging group being nonpolar and having structures that enable free rotation of the symmetric nonpolar molecule portion through the first bridging group and the second bridging group.