Disclosed are a series of photoisomeric compounds, preparation method therefor and device comprising the compounds. A photoisomeric compound-grephene molecular junction device is formed by linking the photoisomeric compound to a gap of two-dimensional monolayer graphene having a nano-gap array via an amide covalent bond. When a single photoisomeric compound is bridged to the gap of the two-dimensional monolayer graphene having a nano-gap array, the devices have a reversible light-controlled switching function and a reversible electrically-controlled switching function. A molecular switch device prepared by the method can achieve high reversibility and good reproducibility. The number of light-controlled switching cycles can exceed 10.sup.4, and the number of electrically-controlled switching cycles can reach about 10.sup.5 or greater. The reversible molecular switch device remains stable within a period of more than one year. Flexible non-losable organic memory transistor devices and light-responsive organic transistor devices can be constructed using the series of photoisomeric compounds.

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self- assembly.

A nanostructured cross-wire memory architecture is provided that can interface with conventional semiconductor technologies and be electrically accessed and read. The architecture links lower and upper sets of generally parallel nanowires oriented crosswise, with a memory element that has a characteristic conductance. Each nanowire end is attached to an electrode. Conductance of the linkages in the gap between the wires encodes the information. The nanowires may be highly-conductive, self-assembled, nucleic acid-based nanowires enhanced with dopants including metal ions, carbon, metal nanoparticles and intercalators. Conductance of the memory elements can be controlled by sequence, length, conformation, doping, and number of pathways between nanowires. A diode can also be connected in series with each of the memory elements. Linkers may also be redox or electroactive switching molecules or nanoparticles where the charge state changes the resistance of the memory element.

The present invention relates to an optical device (100) and a use of the optical device (100). The optical device (100) comprises: a source electrode (2); a drain electrode (4); a gap area (6) between the source electrode (2) and the drain electrode (4); a cluster (8) being positioned in the gap area (6) for connecting and disconnecting the source electrode (2) and the drain electrode (4) and for changing optical and/or plasmonic properties of the gap area (6); and an optical coupling element (10) for bringing light into and out of the gap area (6).

An electrochemical neuromorphic organic device (ENODe) memristor has improved performance and lower power requirements through the use of highly conductive polymers, including ionomer, such as sulfonated tetrafluoroethylene based fluoropolymer-copolymer. These ionomers may be more conductive and may have a low equivalent weight. The ionomer may be reinforced with a support material, such as a thin porous polymer. The thickness of the layer may be reduced to no more than about 50 microns and in some cases no more than 5 microns. Other ionomer polymers include highly functionalized styrene-butadiene copolymers and biphynl based ionomers.

An organic molecular memory of embodiments includes: a first electrode; a second electrode; an organic molecular layer provided between the first electrode and the second electrode, extending in a first direction from the first electrode toward the second electrode, and containing a first molecule and a second molecule provided between the first molecule and the second electrode; and a third electrode facing the second molecule.

In this statement, realization of Non-volatile molecular multiple quantum bit (NVQB) is described. NVQB is the long-term macroscopic time scale analog of MMQB. To realize NVQB, while inverted population of the gas is kept, entanglement generation and coherent state keeping must be carried out for a long-term quantum computation. Operating principle of molecular quantum computer is entanglement generation among huge-number of molecular ro-vibronic eigenstates by emission and absorption of photons due to the Fermi golden rule. Each single photon generated in induced absorption and induced emission sews many quantum states of many molecules by the Fermi golden rule. This results entanglement. When NVQB is realized, NVQB is not only used as quantum storage device up to 2.sup.Na, but also NVQB itself makes practical reasonable commercial molecular quantum computer be realized at once. NVQB is an alias of long-term successfully operating molecular quantum computer.

A storage device according to an embodiment includes a first conductive layer, a second conductive layer, and a resistance change layer. The resistance change layer is positioned between the first conductive layer and the second conductive layer. The resistance change layer including an organic compound. The organic compound has at least one first functional group selected from the group consisting of an amino group, a thiol group, a carboxy group, and an azide group, and the organic compound has one or less aromatic rings.

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.r(B.sup.1).sub.n(Z.sup.2-A.sup.2).sub.s-Sp-G(I)
in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.