An evaporation source includes a heat source structure and an evaporation container for accommodating a to-be-evaporated material. The heat source structure includes a heat source and a thermal conductor. The thermal conductor is in contact with the evaporation container, and the heat source is at the thermal conductor and around the evaporation container.

Manufacturing of a device to connect at least one nano-object to an external electrical system, comprising a support provided with a semiconducting layer in which the first doped zones are formed at a spacing from each other, an external electrical system being connectable to the first doped zones, each first doped zone (8a, 8b) being in contact with a second doped zone on which a portion of the nano-object is located, the second doped zones being separated from each other and with a thickness less than the thickness of the first doped zones.

A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10.sup.4 A/cm.sup.2), a device on/off ratio >10, thin film quality, the ability to lock the spin state (providing nonvolatility), the ability to isothermally unlock and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 ?.Math.cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10.sup.16 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

Molecular Graphene (MG) of a physical size and bonding character that render the molecule suitable as a channel material in an electronic device, such as a tunnel field effect transistor (TFET). The molecular graphene may be a large polycyclic aromatic hydrocarbon (PAH) employed as a discrete element, or as a repeat unit, within an active or passive electronic device. In some embodiments, a functionalized PAH is disposed over a substrate surface and extending between a plurality of through-substrate vias. Heterogeneous surfaces on the substrate are employed to direct deposition of the functionalized PAH molecule to surface sites interstitial to the array of vias. Vias may be backfilled with conductive material as self-aligned source/drain contacts. Directed self-assembly techniques may be employed to form local interconnect lines coupled to the conductive via material. In some embodiments, graphene-based interconnects comprising a linear array of PAH molecules are formed over a substrate.

In this statement, realization of Non-volatile molecular multiple quantum bit (NVQB) is described. NVQB is the long-term macroscopic time scale analogue of MMQB. To realize NVQB, while inverted population of the gas is kept, entanglement generation and coherent state keeping must be carried out for a long-term quantum computation. Operating principle of molecular quantum computer is entanglement generation among huge-number of molecular ro-vibronic eigenstates by emission and absorption of photons due to the Fermi golden rule. Each single photon generated in induced absorption and induced emission sews many quantum states of many molecules by the Fermi golden rule. This results entanglement. When NVQB is realized, NVQB is not only used as quantum storage device up to 2.sup.Na, but also NVQB itself makes practical reasonable commercial molecular quantum computer be realized at once. NVQB is an alias of long-term successfully operating molecular quantum computer.

The present invention relates to polycyclic aromatic hydrocarbon-based compounds, for a molecular electronic device, enabling molecular rectification, and molecular electronic devices comprising a molecular layer formed by means of the compounds self-assembled on an electrode. The compounds according to the present invention can realize rectifying properties by being introduced between electrodes and thus enable a high rectification ratio by means of low voltage driving, and thus can be substituted for a silicon-based diode device and, more particularly, can be utilized for a wearable device, Bluetooth, an IoT enabling device and the like which require low voltage driving.

A reconfigurable polar molecule includes a symmetric nonpolar molecule portion having an elongated shape defined by a longitudinal axis and lateral axis, the longitudinal axis being longer than the lateral axis; a positive ionically charged group at a first end and a negative ionically charged group at a second end of the longitudinal axis, the positive and negative ionically charged groups forming a permanent dipole; a first bridging group and a second bridging group on opposing ends of the lateral axis, the first and second bridging groups being linear nonpolar groups; and a first support portion bonded to the first bridging group, and a second support portion bonded to the second bridging group, the first bridging group and the second bridging group being nonpolar and having structures that enable free rotation of the symmetric nonpolar molecule portion through the first bridging group and the second bridging group.

A support structure for a reconfigurable molecule includes a first support portion having a first mounting region; a second support portion having a second mounting region; and a rotatable molecule anchored between the first support portion and the second support portion on the first mounting region and the second mounting region, the rotatable molecule having an internal rotational axis extending from the first mounting region to the second mounting region; wherein the first support portion and the second support portion are mirror images of one another.

A molecular memory recording molecular polarization of a single-molecule electret, and the single-molecule electret includes a cluster skeleton 100 having a continuous hole 101 and a plurality of stable ionic sites 102a, 102b and a metal ion M. The molecular polarization is shown in a state in which the metal ion is included in the stable ionic site. The molecular polarization is changed by movement of the metal ion to the other hollow stable ionic site by application of an electric field. The recordkeeping time of the molecular memory in a temperature range of 100 C. to 100 C. based on the ion radius of the metal ion is 3.010.sup.2 seconds to 9.110.sup.22 seconds. Based on the recordkeeping time, the molecular memory is used as any of a volatile memory, a non-volatile memory, and a storage class memory.

The present invention relates to an optical device (100) and a use of the optical device (100). The optical device (100) comprises: a source electrode (2); a drain electrode (4); a gap area (6) between the source electrode (2) and the drain electrode (4); a cluster (8) being positioned in the gap area (6) for connecting and disconnecting the source electrode (2) and the drain electrode (4) and for changing optical and/or plasmonic properties of the gap area (6); and an optical coupling element (10) for bringing light into and out of the gap area (6).