An organic semiconductor transistor is provided. The organic semiconductor transistor includes a gate electrode, a gate insulating layer positioned on the gate electrode, a source electrode and a drain electrode which are positioned on the gate insulating layer and spaced apart from each other, a channel layer formed of an organic semiconductor on the gate insulating layer on which the source electrode and the drain electrode are formed, and a dopant layer formed by injecting dopant molecules downward from an upper portion of the channel layer, wherein the dopant layer is formed to be spaced above a position at which each of the source electrode and the drain electrode is in contact with the channel layer, and the dopant molecules and the organic semiconductor form a material combination in which the dopant molecules diffuse in the organic semiconductor in a solid-state diffusion manner.

Provided are a thin film transistor sensor and a manufacturing method thereof. The thin film transistor sensor includes a first substrate and a second substrate opposite to each other, the first substrate includes a first flexible base substrate and a first gate electrode disposed on the first flexible base substrate, and the second substrate includes a second flexible base substrate and a second gate electrode disposed on the second flexible base substrate; the second gate electrode is at least partially overlapped with and separated from the first gate electrode, and configured to be electrically connected to the first gate electrode after the thin film transistor sensor is applied with a voltage, such that the thin film transistor sensor is turned on.

The present disclosure relates to compounds of Formula (1) as useful materials for OLEDs. A is CN, cyanoaryl, or heteroaryl having at least one nitrogen atom as a ring-constituting atom; and D.sup.1, D.sup.2 and D.sup.3 are diarylamino or carbazolyl.

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A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Embodiments herein relate to integrating FIVR switching circuitry into a substrate that has a first side and a second side opposite the first side, where the first side of the substrate to electrically couple with a die and to provide voltage to the die and the second side of the substrate is to couple with an input voltage source. In embodiments, the FIVR switching circuitry may be printed onto the substrate using OFET, CNT, or other transistor technology, or may be included in a separate die that is incorporated within the substrate.

The present invention provides a bio-sensing device comprising: a source electrode and a drain electrode disposed apart from each other; a gate electrode disposed apart between the source electrode and the drain electrode; an insulating film pattern disposed on the gate electrode to electrically insulate the gate electrode from the source electrode and the drain electrode; a sensing film, which is a channel connecting the source electrode and the drain electrode and is disposed on the insulating film pattern and on at least parts of the source electrode and the drain electrode and of which material includes single-walled carbon nanotubes (SWCNTs); and an anchor structure, which is a structure for binding the sensing film to the insulating film pattern and is disposed on the insulating film pattern and of which material includes multi-walled carbon nanotubes (MWCNTs).

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Embodiments of the inventive concepts provide a method of fabricating a flexible substrate and the flexible substrate fabricated thereby. The method includes printing a gate catalyst pattern on a separation layer, forming a gate plating pattern on the gate catalyst pattern, forming a gate insulating layer on the gate plating pattern, printing a source catalyst pattern and a drain catalyst pattern spaced apart from each other on the gate insulating layer, and forming a source plating pattern and a drain plating pattern on the source catalyst pattern and the drain catalyst pattern, respectively.

Provided is a thin film transistor and a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor includes a source electrode pattern and a drain electrode pattern arranged on a same layer and a heat dissipation layer arranged between the source electrode pattern and the drain electrode pattern.

An organic semiconductor compound and a method for manufacturing the same is provided. The method for manufacturing the organic semiconductor compound may include stirring a solated organic semiconductor and a solated organometallic precursor. Herein, the manufacturing the organic semiconductor compound includes: forming a three-dimensional organic semiconductor compound by allowing the solated organic semiconductor to orthogonally penetrate one or more gaps in a lattice structure of a gelated organometallic precursor formed by stirring the solated organometallic precursor.