A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10.sup.4 A/cm.sup.2), a device on/off ratio >10, thin film quality, the ability to “lock” the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω.Math.cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10.sup.16 switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

A device includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, an isolation layer over the low-k dielectric layer, and a work function layer over the etch stop layer. The work function layer is an n-type work function layer. The device further includes a low-dimensional semiconductor layer on a top surface and a sidewall of the work function layer, source/drain contacts contacting opposing end portions of the low-dimensional semiconductor layer, and a dielectric doping layer over and contacting a channel portion of the low-dimensional semiconductor layer. The dielectric doping layer includes a metal selected from aluminum and hafnium, and the channel portion of the low-dimensional semiconductor layer further comprises the metal.

The present disclosure relates to an organic luminescent substrate. The organic luminescent substrate may include a first organic luminescent field effect transistor and a second organic luminescent field effect transistor. The first organic luminescent field effect transistor may include a first gate electrode, a first electrode, a second electrode, and a first active luminescent layer. The second organic luminescent field effect transistor may include a second gate electrode, a third electrode, a fourth electrode, and a second active luminescent layer. One of the first organic luminescent field effect transistor and the second organic luminescent field effect transistor may be an N-type transistor and the other one may be a P-type transistor. The first gate electrode may be coupled to the second gate electrode.

The present disclosure relates to a pixel circuit, a driving method therefor, and a display apparatus. The pixel circuit includes an input sub-circuit, a light emission control sub-circuit and an organic light-emitting transistor. The input sub-circuit is coupled to a gate line, a data line and the light emission control sub-circuit and writes a data signal supplied via the data line into the light emission control sub-circuit under control of a gate scan signal supplied via the gate line. The light emission control sub-circuit is coupled to a control electrode of the organic light-emitting transistor and controls a control electrode voltage of the organic light-emitting transistor according to a written data signal to drive the organic light-emitting transistor to emit light. With the pixel circuit according to embodiments of the present disclosure, active driving of an organic light-emitting transistor is achieved when it is applied in a display apparatus.

The current disclosure describes techniques for forming semiconductor structures having multiple semiconductor strips configured as channel portions. In the semiconductor structures, diffusion break structures are formed after the gate structures are formed so that the structural integrity of the semiconductor strips adjacent to the diffusion break structures will not be compromised by a subsequent gate formation process. The diffusion break extends downward from an upper surface until all the semiconductor strips of the adjacent channel portions are truncated by the diffusion break.

The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

The present disclosure relates to a pixel circuit, a driving method therefor, and a display apparatus. The pixel circuit includes an input sub-circuit, a light emission control sub-circuit and an organic light-emitting transistor. The input sub-circuit is coupled to a gate line, a data line and the light emission control sub-circuit and writes a data signal supplied via the data line into the light emission control sub-circuit under control of a gate scan signal supplied via the gate line. The light emission control sub-circuit is coupled to a control electrode of the organic light-emitting transistor and controls a control electrode voltage of the organic light-emitting transistor according to a written data signal to drive the organic light-emitting transistor to emit light. With the pixel circuit according to embodiments of the present disclosure, active driving of an organic light-emitting transistor is achieved when it is applied in a display apparatus.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.