A nanostructured cross-wire memory architecture is provided that can interface with conventional semiconductor technologies and be electrically accessed and read. The architecture links lower and upper sets of generally parallel nanowires oriented crosswise, with a memory element that has a characteristic conductance. Each nanowire end is attached to an electrode. Conductance of the linkages in the gap between the wires encodes the information. The nanowires may be highly-conductive, self-assembled, nucleic acid-based nanowires enhanced with dopants including metal ions, carbon, metal nanoparticles and intercalators. Conductance of the memory elements can be controlled by sequence, length, conformation, doping, and number of pathways between nanowires. A diode can also be connected in series with each of the memory elements. Linkers may also be redox or electroactive switching molecules or nanoparticles where the charge state changes the resistance of the memory element.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

A memory cell includes a first conductive line, a lower electrode, a carbon nano-tube (CNT) layer, a middle electrode, a resistive layer, a top electrode and a second conductive line. The first conductive line is disposed over a substrate. The lower electrode is disposed over the first conductive line. The carbon nano-tube (CNT) layer is disposed over the lower electrode. The middle electrode is disposed over the carbon nano-tube layer, thereby the lower electrode, the carbon nano-tube (CNT) layer and the middle electrode constituting a nanotube memory part. The resistive layer is disposed over the middle electrode. The top electrode is disposed over the resistive layer, thereby the middle electrode, the resistive layer and the top electrode constituting a resistive memory part. The second conductive line is disposed over the top electrode.

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

A molecular memory recording molecular polarization of a single-molecule electret, and the single-molecule electret includes a cluster skeleton 100 having a continuous hole 101 and a plurality of stable ionic sites 102a, 102b and a metal ion M. The molecular polarization is shown in a state in which the metal ion is included in the stable ionic site. The molecular polarization is changed by movement of the metal ion to the other hollow stable ionic site by application of an electric field. The recordkeeping time of the molecular memory in a temperature range of −100° C. to 100° C. based on the ion radius of the metal ion is 3.0×10.sup.−2 seconds to 9.1×10.sup.22 seconds. Based on the recordkeeping time, the molecular memory is used as any of a volatile memory, a non-volatile memory, and a storage class memory.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.