A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

An organic photodetector includes: an anode; a cathode facing the anode; and an active layer disposed between the anode and the cathode and including a first layer and a second layer. The first layer is disposed between the anode and the second layer, the first layer includes a p-type organic semiconductor and an n-type organic semiconductor, and the second layer includes the p-type organic semiconductor.

This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element. ##STR00001## {R.sup.1-R.sup.6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc. Meanwhile, one of R.sup.1-R.sup.4 is a sulfonic acid group and at least one of the remaining R.sup.1-R.sup.4 is a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc., and m and n are numbers that satisfy 0≤m≤1, 0≤n≤1, and m+n=1.}

An optoelectronic component, including: a bottom electrode, a top electrode, a layer system having at least one photoactive layer, the layer system being disposed between the bottom electrode and the top electrode, a planarization layer disposed on a side of the bottom electrode and/or top electrode facing away from the layer system, at least one barrier layer disposed on the planarization layer, and at least one busbar, the at least one busbar being disposed on the at least one barrier layer, wherein: the planarization layer has electrically conductive particles the electrically conductive particles being introduced into the planarization layer, and the electrically conductive particles electrically conductively bridge the planarization layer through the at least one barrier layer such that the bottom electrode and/or the top electrode electrically conductively contacts the at least one busbar.

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

A light-receiving device that is highly convenient, useful, or reliable is provided. The light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an active layer and a hole-transport layer, the hole-transport layer contains a first organic compound, and the first organic compound is an aromatic monoamine compound or a heteroaromatic monoamine compound having at least one skeleton of biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine, and spirofluorenylamine. Alternatively, the light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an electron-transport layer and an active layer, the electron-transport layer contains a second organic compound, and the second organic compound includes a triazine ring.

There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source is a UV light emitting diode or array of UV-LEDs for rapid and large-area exposure without scanning over the perovskite film, wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λ.sub.max) of the perovskite layer, thereby annealing the perovskite layer. Also disclosed herein are semiconducting devices and articles of manufacture comprising an annealed perovskite layer made by any of the methods described herein, such as solar cells, light-emitting diodes, photodetectors, thin-film transistors, laser diodes, and combinations thereof.

Stable perovskite films having substantially-no phase transition within a predetermined temperature range are disclosed. In the films, formation of carrier traps is suppressed. Thermally stable perovskite solar cells and light-emitting devices using the films are also disclosed.

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.