A photodetector element includes: an anode; a cathode; and an active layer provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, and a value obtained by subtracting the absolute value of energy level of HOMO of the p-type semiconductor material from the absolute value of the energy level of HOMO of the n-type semiconductor material is 0.35 or less. Further, the difference between the HOMO of the n-type semiconductor material and the HOMO of the p-type semiconductor material is preferably 0 to 0.10 eV, and the p-type semiconductor material is preferably a polymer compound containing a constituent unit represented by the following Formula (I).

##STR00001##

Ar.sup.1 and Ar.sup.2 represent a trivalent aromatic heterocyclic group optionally having a substituent or a trivalent aromatic carbocyclic group optionally having a substituent, and Z represents a group represented by Formulae (Z-1) to (Z-7).

A photodetector element includes: an anode; a cathode; and an active layer provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, and a value obtained by subtracting the absolute value of energy level of HOMO of the p-type semiconductor material from the absolute value of the energy level of HOMO of the n-type semiconductor material is 0.35 or less. Further, the difference between the HOMO of the n-type semiconductor material and the HOMO of the p-type semiconductor material is preferably 0 to 0.10 eV, and the p-type semiconductor material is preferably a polymer compound containing a constituent unit represented by the following Formula (I).

##STR00001##

Ar.sup.1 and Ar.sup.2 represent a trivalent aromatic heterocyclic group optionally having a substituent or a trivalent aromatic carbocyclic group optionally having a substituent, and Z represents a group represented by Formulae (Z-1) to (Z-7).

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; forms a lamellar structure in which an organic plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, the perovskite nanocrystalline particle have a particle size greater than or equal to a Bohr diameter beyond a quantum confinement effect, and simultaneously can implement high emission efficiency and emission wavelength which is almost not dependent on particle size. Furthermore, the perovskite nanocrystalline particle in accordance with the present invention, as a nanoparticle which is dispersible in an organic solvent, is applicable in various electronic devices such as light emitting devices, lasers, solar cells, etc.

Disclosed herein are organic semiconductors using optical signaling on a microelectronics package and methods for manufacturing the same. The microelectronics packages may include a substrate, an acceptor, a donor, and a solder resist layer. The substrate may include a trace. The acceptor may be in electrical communication with the trace. The donor may be connected to the acceptor. The solder resist layer may be connected to the substrate and encapsulate a portion of at least the acceptor.

Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

An organic light-emitting display device having an integrated thin-film solar cell includes a substrate, a display disposed in a first area on the substrate to display images and including a first thin-film layer, and a thin-film solar cell disposed in a second area on the substrate to receive sunlight and generate electricity to drive the display and including a second thin-film layer, in which the first thin-film layer and the second thin-film layer include the same thin-film layer extending from the first area to the second area.

Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers are cheap and easy to synthesize, and can exhibit good solubility and great solution processibility, and that enable highly efficient OPVs.

Provided is a perovskite-based photovoltaic device including a layered scaffold material and at least one perovskite material interpenetrating the layered scaffold, wherein the at least one perovskite layer is removable and regenerable.