The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

A solar cell module according to the present disclosure includes a first substrate, a second substrate, a solar cell, an intermediate layer, and a first sealing layer. The first sealing layer is disposed between a peripheral portion of the first substrate and a peripheral portion of the second substrate and seals the solar cell and the intermediate layer in an area between the first substrate and the second substrate. The solar cell has a laminate structure including a first electrode, a photoelectric conversion layer, and a second electrode. The intermediate layer is not adhered to the main surface of the solar cell. A softening temperature T1 of a material of the intermediate layer is higher than a softening temperature T2 of a material of the first sealing layer.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.
Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6  (I)

Organic photovoltaic cells (OPVs) and their compositions are described herein. In one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency. One example of a non-fullerene acceptor is (4,4,10,10-tetrakis(4-hexylphenyl)-5,11-(2-ethylhexyloxy)-4,10-dihydro-dithienyl[1,2-b:4,5b′] benzodi-thiophene-2,8-diyl) bis(2-(3-oxo-2,3-dihydroinden-5,6-dichloro-1-ylidene) malononitrile.

An optical fiber includes an optical fiber core for high-power laser transmission, an optical cladding disposed radially around the optical fiber core, and at least one harvesting cell disposed axially along the optical fiber core, the harvesting cell including an anode surrounding the optical cladding, a photovoltaic layer having a polymer-based photovoltaic material disposed radially around and electrically connected to the anode, and a cathode disposed radially around the photovoltaic layer and electrically connected to the photovoltaic layer.

Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound.

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In Chemical Formula 1, Q.sup.1, Q.sup.2, X.sup.1, X.sup.2, R.sup.1, R.sup.2, and A.sup.1 are the same as in the specification.

The invention relates to organic semiconducting compound and organic photoelectric components containing the organic semiconducting compound. The organic semiconducting compound is designed with a novel chemical structure, so that the compound demonstrates a good response value in the infrared light range, which is suitable for organic photoelectronic components, such as organic photodetector (OPD) or organic field-effect transistor (OFET), which come with a wavelength range of better absorbance and lower interference rate when in use.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.