A solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one of the electron transport layer and the hole transport layer comprises at least one modulated doping layer at a predetermined distance from said at least one junction, said at least one modulated doping layer thereby inducing variation of an energy band structure at a vicinity of said at least one junction generating electric field applied to charge carriers increasing efficiency of generation and/or collection of the charge carriers.

A solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one of the electron transport layer and the hole transport layer comprises at least one modulated doping layer at a predetermined distance from said at least one junction, said at least one modulated doping layer thereby inducing variation of an energy band structure at a vicinity of said at least one junction generating electric field applied to charge carriers increasing efficiency of generation and/or collection of the charge carriers.

This relates to a device for detecting or converting light or heat energy, the device comprising: a Graphene sheet formed into a scroll such as to provide a monolayer structure in which the radius of curvature of the graphene sheet increases on increasing distance from the longitudinal axis of the scroll.

This relates to a device for detecting or converting light or heat energy, the device comprising: a Graphene sheet formed into a scroll such as to provide a monolayer structure in which the radius of curvature of the graphene sheet increases on increasing distance from the longitudinal axis of the scroll.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

A material comprising a group of formula (I): (I) wherein: X and Y are each independently selected from S, O or Se; Ar1, Ar2, Ar3 and Ar4 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group or are absent; A.sup.1 and A.sup.2 are each independently an unsubstituted or a substituted benzene, an unsubstituted or a substituted 5- or 6-membered heteroaromatic group, a non-aromatic 6-membered ring having ring atoms selected from C, N, S and O or are absent; R.sup.1 is H or a substituent; R.sup.2 and R.sup.3 are each independently H or a substituent; and * represents a point of attachment to a hydrogen or non-hydrogen substituent.

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There is a polymeric photovoltaic cell (or solar cell) with inverted structure having an anode; an anodic buffer layer; an active layer having at least one photoactive organic polymer as electron-donor and at least one electron-accepting organic compound; a cathodic buffer layer; and a cathode. The at least one photoactive organic polymer is selected from conjugated polymers comprising an anthraditiophenic derivative having a general formula (I):

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The polymeric photovoltaic cell (or solar cell) with inverted structure shows good values of power conversion efficiency (PCE) (η) and can be advantageously used in the construction of photovoltaic modules (or solar modules), either on a rigid support or on a flexible support.

A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.