A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.

This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element. ##STR00001## {R.sup.1-R.sup.6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc. Meanwhile, one of R.sup.1-R.sup.4 is a sulfonic acid group and at least one of the remaining R.sup.1-R.sup.4 is a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc., and m and n are numbers that satisfy 0≤m≤1, 0≤n≤1, and m+n=1.}

An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

A stretchable device includes a stretchable substrate, and a plurality of optoelectronic diodes on the stretchable substrate. At least one optoelectronic diode includes a first electrode and a second electrode, and an active layer between the first electrode and the second electrode. The active layer includes a first semiconductor, a second semiconductor having different electrical characteristics from the first semiconductor, and an insulating elastomer.

A light-receiving device that is highly convenient, useful, or reliable is provided. The light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an active layer and a hole-transport layer, the hole-transport layer contains a first organic compound, and the first organic compound is an aromatic monoamine compound or a heteroaromatic monoamine compound having at least one skeleton of biphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, fluorenylamine, and spirofluorenylamine. Alternatively, the light-receiving device includes a light-receiving layer between a pair of electrodes, the light-receiving layer includes an electron-transport layer and an active layer, the electron-transport layer contains a second organic compound, and the second organic compound includes a triazine ring.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

The invention relates to a compound of the general formula I

##STR00001##

to an optoelectronic component containing said type of compound, and to the use of said type of compound in optoelectronic components.

A polymer comprising

##STR00001## wherein m+n=1.

The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.