A method of manufacturing a perovskite multilayered structure includes providing a substrate, forming a first perovskite layer on the substrate, forming a second perovskite layer by a reaction between the halogen compounds and at least one of the metal halides, the metal oxides, or the metal sulfides.

A solar cell module (100) including: a substrate (1); and a plurality of photoelectric conversion elements disposed on the substrate (1), each of the plurality of photoelectric conversion elements including a first electrode (2a, 2b), an electron transport layer (3, 4), a perovskite layer (5), a hole transport layer (6), and a second electrode (7a, 7b), wherein, within at least two of the photoelectric conversion elements adjacent to each other, the hole transport layers (6) are continuous with each other, and the first electrodes (2a, 2b), the electron transport layers (3, 4), and the perovskite layers (5) are separated by the hole transport layer (6) within the at least two of the photoelectric conversion elements adjacent to each other.

There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbCl.sub.x core/shell nanocrystal absorber layer. The PbCl.sub.x shell in the PbS/PbCl.sub.x nanocrystals provide native passivation in the (100) crystal facets and enable removal of native ligands and ligand exchange on the (111) crystal facets of the PbS/PbCl.sub.x nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.

The present invention relates to a process for producing a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c, wherein: [M] comprises one or more first cations, which one or more first cations are metal or metalloid cations; [A] comprises one or more second cations; [X] comprises one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, and wherein the solvent comprises: (i) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent; and (ii) a first organic amine comprising at least three carbon atoms. Also described are compositions useful in the process of the invention.

A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1+n2+n3 may equal 1.

Embodiments of this application provide a perovskite solar cell, a preparation method thereof, and an electric device. The perovskite solar cell includes: a back plate; a transparent substrate, where a sealed cavity is formed between the transparent substrate and the back plate; and a perovskite solar cell device, where the perovskite solar cell device is located in the sealed cavity; where the sealed cavity contains ammonia gas having a volume fraction of 10%-100% and residual inert gas. The 10%-100% ammonia gas can improve chemical stability of a perovskite material, thus improving thermal stability of the perovskite solar cell device, and further improving efficiency and service life of the perovskite solar cell.

A perovskite solar cell, a preparation method therefor and a power consuming device are provided. In some embodiments, the perovskite solar cell of the present application has, in order, a back electrode, a hole transport layer, an interface passivation layer, a perovskite layer, an interface passivation layer, an electron transport layer, and conductive glass, wherein the HOMO energy level of an interface between the perovskite layer and the interface passivation layer is 0.01-0.4 eV, and the energy band gap between the HOMO energy level and the LUMO energy level is 0.01-0.4 eV; and the interface passivation layer contains: an organic amine salt of a biphenyl compound and/or an organic amine salt of an acene compound. In the perovskite solar cell according to the present application, by passivating the perovskite layer therein with an organic amine salt of a biphenyl compound or acene compound, the VBM of the perovskite layer is improved, facilitating the extraction of holes, and the transport efficiency of carriers is improved, so that the efficiency and stability of the perovskite solar cell can be greatly improved.

A post-deposition treatment universally applicable to a wide range of perovskite solar cell configurations and architectures. The methodology yields significant improvements in device efficiency and lifetime coupled with a reduction in inherent batch-to-batch variability in all performance metrics. Such improvements are achieved following an aerosol-induced recrystallisation of solution-deposited MAPbI.sub.3 thin films that result in a significant enlargement and improved homogeneity of grain size. The aerosol treatment is demonstrated as being suitable for a range of active layer thicknesses, interlayer choices, architectures and device active areas.