H10K30/40

Hybrid perovskite solar cell with organoselenium-based polymer hole transport layer

The hybrid perovskite solar cell with an organoselenium-based polymer hole transport layer includes an optically transparent first electrode layer, an electron transport layer, and a perovskite layer. The electron transport layer is sandwiched between the optically transparent first electrode layer and the perovskite layer. The hybrid perovskite solar cell with an organoselenium-based polymer hole transport layer further includes a hole transport layer and a second electrode layer. The perovskite layer is sandwiched between the electron transport layer and the hole transport layer, and the hole transport layer is sandwiched between the perovskite layer and the second electrode layer. The hole transport layer is formed from an organoselenium-based polymer.

Hybrid perovskite solar cell with organoselenium-based polymer hole transport layer

The hybrid perovskite solar cell with an organoselenium-based polymer hole transport layer includes an optically transparent first electrode layer, an electron transport layer, and a perovskite layer. The electron transport layer is sandwiched between the optically transparent first electrode layer and the perovskite layer. The hybrid perovskite solar cell with an organoselenium-based polymer hole transport layer further includes a hole transport layer and a second electrode layer. The perovskite layer is sandwiched between the electron transport layer and the hole transport layer, and the hole transport layer is sandwiched between the perovskite layer and the second electrode layer. The hole transport layer is formed from an organoselenium-based polymer.

PEROVSKITE INK FOR SCALABLE FABRICATION OF EFFICIENT AND STABLE PEROVSKITE MODULES
20230340288 · 2023-10-26 ·

Described herein are non-stoichiometric perovskite ink solutions, comprising: a first composition of formula FA.sub.1-xCs.sub.xBX.sub.3; a second composition of CsX, FAX, REX.sub.3, or REX.sub.2; and one or more solvents; wherein x, X, RE, and B are as defined herein. Methods for preparing polycrystalline perovskite films using the non-stoichiometric ink solutions and the use of the films in large-size solar modules are additionally described.

FORMULATIONS FOR THE MANUFACTURE OF PEROVSKITE DEVICES
20230345745 · 2023-10-26 ·

The present disclosure relates to a device that includes a perovskite layer; and a first layer that includes a molecule having a structure according to formula (I)

##STR00001##

Wherein the perovskite layer and the first layer are in physical contact, n is between 1 and 10, inclusively, R.sub.1 includes at least one of hydrogen, a first alkyl group, a first alkoxy group, and/or a first halogen, R.sub.2 includes at least one of hydrogen, a second alkyl group, a second alkoxy group, and/or a second halogen, R.sub.1 is bonded to aromatic ring (A) at carbon atom (1), carbon atom (2), carbon atom (3), or carbon atom (4), R.sub.2 is bonded to aromatic ring (B) at carbon atom (5), carbon atom (6), carbon atom (7), or carbon atom (8), and R.sub.1 and R.sub.2 are the same or different.

FORMULATIONS FOR THE MANUFACTURE OF PEROVSKITE DEVICES
20230345745 · 2023-10-26 ·

The present disclosure relates to a device that includes a perovskite layer; and a first layer that includes a molecule having a structure according to formula (I)

##STR00001##

Wherein the perovskite layer and the first layer are in physical contact, n is between 1 and 10, inclusively, R.sub.1 includes at least one of hydrogen, a first alkyl group, a first alkoxy group, and/or a first halogen, R.sub.2 includes at least one of hydrogen, a second alkyl group, a second alkoxy group, and/or a second halogen, R.sub.1 is bonded to aromatic ring (A) at carbon atom (1), carbon atom (2), carbon atom (3), or carbon atom (4), R.sub.2 is bonded to aromatic ring (B) at carbon atom (5), carbon atom (6), carbon atom (7), or carbon atom (8), and R.sub.1 and R.sub.2 are the same or different.

EFFICIENT AND STABLE P-I-N STRUCTURED PEROVSKITE SOLAR CELLS
20230380266 · 2023-11-23 ·

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.

EFFICIENT AND STABLE P-I-N STRUCTURED PEROVSKITE SOLAR CELLS
20230380266 · 2023-11-23 ·

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.

PEROVSKITE LAYER, MANUFACTURE METHOD FOR PEROVSKITE LAYER, PEROVSKITE LAYER SOLAR CELL, AND PEROVSKITE LAYER SOLAR CELL ASSEMBLY
20230380197 · 2023-11-23 ·

The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

PEROVSKITE LAYER, MANUFACTURE METHOD FOR PEROVSKITE LAYER, PEROVSKITE LAYER SOLAR CELL, AND PEROVSKITE LAYER SOLAR CELL ASSEMBLY
20230380197 · 2023-11-23 ·

The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

PHOTOVOLTAIC DEVICE

A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.