The invention relates to a method for synthesis of films made of light-absorbing material with perovskite-like structure which can be used for fabrication of perovskite solar cells. The method for synthesis of films made of light-absorbing material with perovskite-like structure with a structural formula ACB.sub.3 is characterized by sequential deposition of a layer of a reagent C onto a layer of a reagent AB with a thickness determined by stoichiometry of the reaction followed by the immersion of the layers in a liquid or gaseous medium containing reagent B.sub.2 where component A states for CH.sub.3NH.sub.3.sup.+, (NH.sub.2).sub.2CH.sup.+, C(NH.sub.2).sub.3.sup.+, Cs.sup.+ or a mixture thereof, component B states for Cl.sup., Br.sup., I.sup. or a mixture thereof, component C states for metals Sn, Pb, Bi, or their melts, oxides, salts. The technical result achieved using the claimed invention is a simple and fast method for fabrication of a layer of light-absorbing organic-inorganic material with a perovskite-like structure which is homogeneous due to the formation of a film of the intermediate phase AB-B.sub.2 with improved morphology on the surfaces of a large area due to rapid crystallization, which allows the obtained material to be used in solar cells of large area.

According to some embodiments, an organic device and method of forming an organic device are disclosed. A hybrid cathode layer is formed in stacked alignment with a substrate. The hybrid cathode layer includes a combination of a conductive nanowire and an electron-transport material. After forming the hybrid cathode layer, a photoactive layer is formed on a structure that includes the substrate and the hybrid cathode layer. After forming the photoactive layer, a hybrid anode layer that is separated from the hybrid cathode layer by the photoactive layer is formed. The hybrid anode layer includes a combination of a conductive nanowire and a hole-transporting material.

An organic photodetector comprising a first electrode, a second electrode, and a photosensitive organic layer between the electrodes, the photosensitive organic layer comprising a donor polymer and an acceptor compound, characterized in that the acceptor compound has a LUMO level shallower than that of the fullerene derivative PCBM.

The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than 4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.

The invention relates to a three-dimensional bionic composite material based on refection elimination and double-layer P/N heterojunctions. The preparation method of the composite material comprises: (1) anisotropically etching a silicon wafer with an alkaline solution, to form compactly arranged tetragonal pyramids on the surface of the silicon wafer; (2) performing hydrophilic treatment on the silicon wafer, growing TiO2 crystal seeds on the surface of the silicon wafer, and calcining the silicon wafer in a muffle furnace; (3) putting the silicon wafer obtained in the step (2) into a reaction kettle, and growing TiO2 nano-rods on the side walls of silicon cones by a hydrothermal synthesis method; and (4) depositing PPY nano-particles on the TiO2 nano-rods. The composite material has good refection elimination performance and efficient photogenerated charge separation capability, and is applicable in fields of photo-catalysis, photoelectric conversion devices, solar cells and the like.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

An Anthradithiophene derivative having general formula (I):

##STR00001##

can be advantageously used in the synthesis of electron donor polymers These polymers can be advantageously used in the construction of photovoltaic devices (or solar devices) such as, for example, photovoltaic cells (or solar cells), photovoltaic modules (or solar modules), either on a rigid support or on a flexible support. Furthermore, these polymers can be advantageously used in the construction of Organic Thin Film Transistors (OTFTs), or Organic Field Effect Transistors (OFETs), or Organic Light-Emitting Diodes (OLEDs).

The invention relates to a compound comprising a hexabenzocoronene core to which are bonded, in position 2 and 5, a polymer ZP46, optionally via a spacer, and to which are bonded substituents selected from a group COOH, CN, N+C, OCN or CF.sub.3, at position 1, 3, 4, and 6; a donor:acceptor layer comprising it, and a device comprising such a compound and such a layer and its use in the field of organic photovoltaic cells.

Embodiments of the invention include methods for producing polymer gels useful in the fabrication of organic cells. The method includes mixing poly(3-hexylthiophene) with phenyl-C61 butyric acid methyl ester and solvent to form a first solution, where the poly(3-hexylthiophene) includes at least some regioregular poly(3-hexylthiophene). The first solution is then cooled to a specified temperature to induce gelation to form an at least partially gelled solution that can be deposited onto a surface to form a coated surface. At least one or more steps of the method can occur as an extrusion process carried out in a twin-screw or single-screw extruder.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.

Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6(I)