The present invention relates to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby and, more specifically, to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby, wherein the method comprises the steps of: (S1) applying a) an oxidative agent, b) ultraviolet light and ozone, c) oxygen plasma, or d) nitrogen dioxide gas to a hole transport layer (HTL) of a laminate in which a substrate layer, a first electrode layer, and the hole transport layer (HTL) containing a metal oxide are sequentially laminated, to oxidize the metal oxide; and (S2) sequentially laminating a perovskite layer, an electron transport layer, and a second electrode layer on the hole transport layer of the laminate.

An in-situ flash evaporation film forming apparatus for a perovskite solar cell includes a platform; a substrate disposed on the platform and configured to form a film layer; and a cavity cover movably disposed up and down on the platform, and being able to enclose the substrate into a closed cavity surrounded by the cavity cover and the platform, a vacuum pipe being disposed on the cavity cover and being able to communicate the closed cavity with a vacuum pump.

An in-situ flash evaporation film forming apparatus for a perovskite solar cell includes a platform; a substrate disposed on the platform and configured to form a film layer; and a cavity cover movably disposed up and down on the platform, and being able to enclose the substrate into a closed cavity surrounded by the cavity cover and the platform, a vacuum pipe being disposed on the cavity cover and being able to communicate the closed cavity with a vacuum pump.

The present application provides a perovskite solar cell, including conductive glass, a hole transport layer, a perovskite layer, an electron transport layer and a back electrode, where a passivation layer may be disposed between the hole transport layer and the perovskite layer, and the passivation layer may include an amide and/or a cation thereof, where the amide may include a compound of formula (1) and/or formula (2):

##STR00001## where R.sub.1 and R.sub.2 are each independently selected from hydrogen, —R, —NR.sub.2, —NHR, —NH.sub.2, —OH, —OR, —NHCOR, —OCOR, and —CH.sub.2COOH, where R represents a straight or branched chain alkyl group having 1-10 carbon atoms, m is an integer of 0 to 10; and n is an integer of 1 to 10; and

##STR00002## where Ar is selected from a C5-C10 aryl or heteroaryl group.

A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.

A perovskite solar battery, including a transparent conductive glass substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode are described. The hole transport layer is a nickel oxide hole transport layer. Simple-substance nickel exists on a contact surface of the hole transport layer in contact with the perovskite light-absorbing layer. On the contact surface of the hole transport layer in contact with the perovskite light-absorbing layer, a ratio between simple-substance nickel and trivalent nickel is 85:15 to 99:1, optionally 90:10 to 99:1, and further optionally 95:5 to 99:1. This application further provides a method for preparing a perovskite solar battery.

The present invention relates to an inorganic perovskite quantum dot-based solar cell capable of providing a significantly excellent photoelectric conversion efficiency compared to the related art by increasing a light absorption capacity even though a photoactive layer has a limited thickness. Specifically, the inorganic perovskite solar cell may include: an electron transport layer that is disposed on a transparent electrode; a photoactive layer having a flat structure that is disposed on the electron transport layer and includes inorganic perovskite quantum dots; an organic hole transport layer that is disposed on the photoactive layer and includes nanopatterns; and a back electrode that is disposed on the organic hole transport layer.

The present invention relates to an inorganic perovskite quantum dot-based solar cell capable of providing a significantly excellent photoelectric conversion efficiency compared to the related art by increasing a light absorption capacity even though a photoactive layer has a limited thickness. Specifically, the inorganic perovskite solar cell may include: an electron transport layer that is disposed on a transparent electrode; a photoactive layer having a flat structure that is disposed on the electron transport layer and includes inorganic perovskite quantum dots; an organic hole transport layer that is disposed on the photoactive layer and includes nanopatterns; and a back electrode that is disposed on the organic hole transport layer.

A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ.sub.2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type Cs.sub.xFA(.sub.1-x+w)Pb(I.sub.yBr(.sub.1-y)).sub.3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ.sub.2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type Cs.sub.xFA(.sub.1-x+w)Pb(I.sub.yBr(.sub.1-y)).sub.3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).