Patent classifications
H10K30/50
PEROVSKITE INK FOR SCALABLE FABRICATION OF EFFICIENT AND STABLE PEROVSKITE MODULES
Described herein are non-stoichiometric perovskite ink solutions, comprising: a first composition of formula FA.sub.1-xCs.sub.xBX.sub.3; a second composition of CsX, FAX, REX.sub.3, or REX.sub.2; and one or more solvents; wherein x, X, RE, and B are as defined herein. Methods for preparing polycrystalline perovskite films using the non-stoichiometric ink solutions and the use of the films in large-size solar modules are additionally described.
EFFICIENT AND STABLE P-I-N STRUCTURED PEROVSKITE SOLAR CELLS
The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.
EFFICIENT AND STABLE P-I-N STRUCTURED PEROVSKITE SOLAR CELLS
The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.
PEROVSKITE LAYER, MANUFACTURE METHOD FOR PEROVSKITE LAYER, PEROVSKITE LAYER SOLAR CELL, AND PEROVSKITE LAYER SOLAR CELL ASSEMBLY
The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.
Co-doped zinc oxide nanoparticles as electron transport material
An electron transport includes a metal co-doped zinc oxide compound having a formula Mn.sub.xCo.sub.0.015Zn.sub.1−xO, wherein x has a value in a range of 0.001 to 0.014. The electron transport material of the present disclosure may be used in a perovskite solar cell.
A TRANSLUCENT PHOTOVOLTAIC DEVICE AND A METHOD FOR MANUFACTURING THEREOF
A translucent photovoltaic (PV) device comprising a semi-transparent substrate 120 and at least one translucent photovoltaic (PV) cell 100, the PV cell 100 comprising a stack 110 of layers disposed on the substrate 120, the stack 110 comprising: a front electrode layer 112, a back electrode layer 113, and a perovskite photoactive layer 111 between the anode layer and the cathode layer. The back electrode layer 113 comprises carbon, wherein the stack 110 of layers comprises laser-made light-transmissive apertures 130 extending through at least the back electrode layer 113 and the perovskite photoactive layer 111 wherein the light-transmissive apertures 130 are fully surrounded by the layer stack 110 layers that contribute to the power conversion.
Doped perovskite having improved stability, and solar cells made thereof
A light-harvesting material comprises a perovskite absorber doped with a metal chalcogenide. The light-harvesting material may be used in a photovoltaic device, comprising (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material.
Ordered nanoscale domains by infiltration of block copolymers
A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.
Methods for producing perovskite halide films
An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.
Selenium-fullerene heterojunction solar cell
Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.