H10K30/80

Structure, optical sensor, and image display device
11631720 · 2023-04-18 · ·

Provided is a structure 1 including an infrared light photoelectric conversion element 300 including an infrared light photoelectric conversion layer including a photoelectric conversion material that has a maximum absorption wavelength in an infrared range and generates a charge depending on absorbed light in the infrared range; a visible light photoelectric conversion element 200 that absorbs a light beam having a wavelength in a visible range and generates a charge depending on absorbed light; and an optical filter 400 that blocks and transmits a light beam of a predetermined wavelength, in which the infrared light photoelectric conversion element 300, the visible light photoelectric conversion element 200, and the optical filter 400 are provided on the same optical path, and each of the infrared light photoelectric conversion element 300 and the visible light photoelectric conversion element 200 is provided on an emission side of light from the optical filter 400. Provided is further an optical sensor and an image display device, each of which including the structure 1.

Integration of bypass diodes within thin film photovoltaic module interconnects
11631777 · 2023-04-18 · ·

Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, a solar cell interconnect includes a bypass diode between adjacent solar cells to allow the flow of current around a single solar cell.

HETEROJUNCTION OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
20230165018 · 2023-05-25 ·

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

HETEROJUNCTION OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
20230165018 · 2023-05-25 ·

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

PHOTOELECTRIC CONVERSION ELEMENT MODULE AND METHOD OF PRODUCING SAME
20230114517 · 2023-04-13 · ·

A photoelectric conversion element module (1) includes a plurality of photoelectric conversion elements (15) formed on a light-transmitting base plate (3). The photoelectric conversion elements (15) each include a transparent conductive film (4), a first charge transport layer (5), a power-generating layer (6), and a second charge transport layer (7) stacked in order from a side corresponding to the light-transmitting base plate (3). The second charge transport layer (7) is formed of a porous film that contains a carbon material. Among two of the photoelectric conversion elements (15) that are adjacent to each other, the second charge transport layer (7) of one photoelectric conversion element and the transparent conductive film (4) of the other photoelectric conversion element are electrically connected via a first conductive adhesive layer (9), a current-collecting electrode (11), and a second conductive adhesive layer (14).

PHOTOELECTRIC CONVERSION ELEMENT MODULE AND METHOD OF PRODUCING SAME
20230114517 · 2023-04-13 · ·

A photoelectric conversion element module (1) includes a plurality of photoelectric conversion elements (15) formed on a light-transmitting base plate (3). The photoelectric conversion elements (15) each include a transparent conductive film (4), a first charge transport layer (5), a power-generating layer (6), and a second charge transport layer (7) stacked in order from a side corresponding to the light-transmitting base plate (3). The second charge transport layer (7) is formed of a porous film that contains a carbon material. Among two of the photoelectric conversion elements (15) that are adjacent to each other, the second charge transport layer (7) of one photoelectric conversion element and the transparent conductive film (4) of the other photoelectric conversion element are electrically connected via a first conductive adhesive layer (9), a current-collecting electrode (11), and a second conductive adhesive layer (14).

DISPLAY DEVICE

A display device includes a substrate, and unit pixels provided in the substrate, and including sub-pixels each having a light-emitting element emitting light, and photo-sensing pixels each having a light-receiving element outputting a sensing signal corresponding to the light. Each of the sub-pixels may include an emission area emitting the light, and each of the photo-sensing pixels may include a light-receiving area receiving the light. The emission area and the light-receiving area may be provided in the substrate to be spaced apart from each other. Each of the emission area and the light-receiving area may have a shape of a quadrangular plane.

DISPLAY DEVICE

A display device includes a substrate, and unit pixels provided in the substrate, and including sub-pixels each having a light-emitting element emitting light, and photo-sensing pixels each having a light-receiving element outputting a sensing signal corresponding to the light. Each of the sub-pixels may include an emission area emitting the light, and each of the photo-sensing pixels may include a light-receiving area receiving the light. The emission area and the light-receiving area may be provided in the substrate to be spaced apart from each other. Each of the emission area and the light-receiving area may have a shape of a quadrangular plane.

Solar cell

Provided is a solar cell including a first electrode, a second electrode, a light-absorbing layer located between the first electrode and the second electrode, and an intermediate layer located between the light-absorbing layer and at least one electrode selected from the group consisting of the first electrode and the second electrode. The light-absorbing layer contains a perovskite compound represented by a chemical formula ASnX.sub.3 (where A is a monovalent cation and X is a halogen anion). The intermediate layer is in contact with the light-absorbing layer. The at least one electrode selected from the group consisting of the first electrode and the second electrode has light-transmissive property. The intermediate layer contains at least one selected from the group consisting of (4-(1′,5′-dihydro-1′-methyl-2′H-[5,6]fullereno-C60-Ih[1,9-c]pyrrol-2′-yl)benzoic acid) and fullerene C60.

IMAGING DEVICE

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.