A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

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A photoelectric conversion element includes a first electrode section; a second electrode section; an electron-transporting section between the first electrode section and the second electrode section; a light-absorbing section; and a hole-transporting section. The hole-transporting section has a peak that reaches maximum at a Raman shift of 1575 cm.sup.−1±10 cm.sup.−1 and a peak that reaches maximum at a Raman shift of 1606 cm .sup.−1±10 cm.sup.−1 in a Raman spectrum obtained by emitting laser light having a wavelength of 532 nm; and has a peak intensity ratio A/B of 0.80 or more, the peak intensity ratio A/B being obtained from a maximum peak intensity A of the peak that reaches maximum at 1575 cm.sup.−1±10 cm.sup.−1 and a maximum peak intensity B of the peak that reaches maximum at 1606 cm.sup.−1±10 cm.sup.−1.

Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

This invention provides a filter-free tunable spectrum PD with a layered structure of at least two electrodes and two functional layers. Both functional layers can be a layer, a stack of inorganic semiconductors, an organic semiconductor, an organic/polymer donor/acceptor blend, a hybrid semiconductor or their combinations that has a good charge transport property. The first functional layer absorbs the shorter-wavelength EM waves and is transparent to the longer-wavelength EM waves. The second functional layer absorbs the longer-wavelength EM waves. The detection spectrum window is determined by the difference in wavelengths between the transmission cut-off wavelength of the first functional layer and absorbing edge of the second functional layer, or between the absorption edge of the first functional layer and that of the second functional layer. The present PDs can be used in imaging, thermal therapy, night-vision, Li-Fi, optical communication, environmental detection, agricultural, wellness, bioimage, food, automotive and security monitoring.

The invention concerns a liquid crystal spatial light modulator (101) comprising: a liquid crystal layer (7); and on at least one side of the liquid crystal layer (7), at least one photovoltaic cell (456), each photovoltaic cell (456) comprising a photosensitive layer (5) comprising electron-donating (D) molecules and electron accepting (A) molecules, each photovoltaic cell (456) being arranged for spontaneous photovoltage under illumination. Electron-donating molecules and electron accepting molecules are preferably blended and form preferably an organic bulk heterojunction layer. The photosensitive layer (5) of each photovoltaic cell (456) is preferably comprised between: —an electron conducting layer (4) arranged for a transfer of an electron from its contacting photosensitive layer (5) easier than a transfer of an electron hole from its contacting photosensitive layer (5), and —an electron hole conducting layer (6) arranged for a transfer of an electron hole from its contacting photosensitive layer (5) easier than a transfer of an electron from its contacting photosensitive layer (5).

In various aspects, the present disclosure provides photodetector devices that may be provided in arrays. The photodetector includes a first electrode, a second electrode, and a photoactive layer assembly disposed therebetween. The photoactive layer assembly comprises a first charge transport layer, a second charge transport layer, and an amorphous silicon (a-Si) material substantially free of doping and being substantially free of doping disposed between the first charge transport layer and the second charge transport layer. The photodetector device transmits light in a predetermined range of wavelengths and is capable of generating detectable photocurrent when light having a light intensity of less than or equal to about 50 Lux is directed towards the photodetector device.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

A photosensor includes a first electrode, a second electrode that opposes the first electrode, and a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoelectric conversion layer contains a perovskite compound. The fluorescence spectrum of the perovskite compound has a first peak at a first wavelength and a second peak at a second wavelength that is longer than the first wavelength. The photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.