H10K39/30

Radiation detector

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

FLEXIBLE SUBSTRATE
20210234108 · 2021-07-29 · ·

According to one embodiment, a flexible substrate includes an insulating basement including an island-like portion and a plurality of belt portions, an organic insulating layer, and an electrical element and a projecting portion provided on the organic insulating layer and overlapping the island-like portion. The electrical element includes a common electrode, a first electrode located between the organic insulating layer and the common electrode, and an active layer located between the common electrode and the first electrode. The projecting portion is located on the first electrode and projects in a direction towards the common electrode from the first electrode.

Optical wireless communications systems

An optical wireless communication system includes an optical wireless transmitter configured to emit a discrete-time signal of first light, second light, and third light having different wavelength spectra; and a light-receiving sensor including an optical wireless receiver including first, second, and third photoelectric conversion devices configured to convert discrete-time signals of the first, second, and third light beams into first, second, and third photoelectric conversion signals, respectively, wherein the second photoelectric conversion device at least partially overlaps the first photoelectric conversion device, and the third photoelectric conversion device at least partially overlaps at least one photoelectric conversion device of the first photoelectric conversion device or the second photoelectric conversion device, and at least one photoelectric conversion device of the first photoelectric conversion device, the second photoelectric conversion device, or the third photoelectric conversion device includes an organic light absorbing material, a quantum dot, or a combination thereof.

Detection device and detector

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

RADIATION DETECTION DEVICE COMPRISING ORGANIC PHOTODIODES

A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

SHORTWAVE INFRARED ORGANIC PHOTODIODE WITH AN INCREASED DIELECTRIC CONSTANT
20210111359 · 2021-04-15 ·

Embodiments of a shortwave infrared organic photodiode (IR) are disclosed. The IR includes a substrate layer. The IR includes a first electrode layer, the first electrode layer disposed on the substrate layer. The IR includes a first interfacial layer, the first interfacial layer disposed on the first electrode layer. The IR includes a bulk heterojunction, the bulk heterojunction disposed on the first interfacial layer. The bulk heterojunction may include an additive with a dielectric constant above a threshold value. The IR includes a second interfacial layer, the second interfacial layer disposed on the bulk heterojunction. The IR includes a second electrode layer, the second electrode layer disposed on the second interfacial layer.

ARRAY SUBSTRATE AND DISPLAY PANEL
20210057495 · 2021-02-25 ·

An embodiment of the present disclosure provides an array substrate and a display panel. The array substrate includes a base substrate, organic electroluminescence components arranged on the base substrate in an array, and a photoelectric conversion component corresponding to each of the organic electroluminescence components. A luminescent spectrum of each organic electroluminescence component comprises a first waveband and a second waveband. The first waveband is determined by an emission peak of the luminescent spectrum, and is used to determine brightness and tone purity of light emitted by the organic electroluminescence component. The photoelectric conversion component is at least used to convert light of the second waveband emitted by a corresponding organic electroluminescence component into electric energy.

SELF-POWERED ORGANOMETALLIC HALIDE PEROVSKITE PHOTODETECTOR WITH HIGH DETECTIVITY
20210066396 · 2021-03-04 ·

A self-powered and flexible photodetector system includes a triboelectric nanogenerator, TENG, device configured to generate an electrical current from a mechanical movement; a photodetector, PD, sensor, formed on the TENG device and configured to detect a light; and a voltage regulating circuit electrically connected to the TENG device and the PD sensor and configured to regulate a voltage provided by TENG device to the PD sensor. The PD sensor and the TENG device are flexible.

Radiation detector and method for manufacturing the same

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 m or more.

FILTER-FREE TUNABLE SPECTRUM PHOTODETECTORS
20200411782 · 2020-12-31 ·

This invention provides a filter-free tunable spectrum PD with a layered structure of at least two electrodes and two functional layers. Both functional layers can be a layer, a stack of inorganic semiconductors, an organic semiconductor, an organic/polymer donor/acceptor blend, a hybrid semiconductor or their combinations that has a good charge transport property. The first functional layer absorbs the shorter-wavelength EM waves and is transparent to the longer-wavelength EM waves. The second functional layer absorbs the longer-wavelength EM waves. The detection spectrum window is determined by the difference in wavelengths between the transmission cut-off wavelength of the first functional layer and absorbing edge of the second functional layer, or between the absorption edge of the first functional layer and that of the second functional layer. The present PDs can be used in imaging, thermal therapy, night-vision, Li-Fi, optical communication, environmental detection, agricultural, wellness, bioimage, food, automotive and security monitoring.