A charged particle counting device, a manufacturing method thereof, and a charged particle counting system are provided. The charged particle counting device includes: a bipolar transistor (10) and a magneto-electric induction coil (20), a gate (101) of the bipolar transistor is electrically connected to an end of the magneto-electric induction coil, and the other end of the magneto-electric induction coil is applied with a constant voltage, when a stream of positively charged particles passes through the magneto-electric induction coil and a first induced voltage generated by the magneto-electric induction coil is greater than a predetermined voltage threshold, a channel of the bipolar transistor is an N-type channel; and when a stream of negatively charged particles passes through the magneto-electric induction coil and a second induced voltage generated by the magneto-electric induction coil is less than the predetermined voltage threshold, the channel of the bipolar transistor is a P-type channel.

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

An optical wireless communication system includes an optical wireless transmitter configured to emit a discrete-time signal of first light, second light, and third light having different wavelength spectra; and a light-receiving sensor including an optical wireless receiver including first, second, and third photoelectric conversion devices configured to convert discrete-time signals of the first, second, and third light beams into first, second, and third photoelectric conversion signals, respectively, wherein the second photoelectric conversion device at least partially overlaps the first photoelectric conversion device, and the third photoelectric conversion device at least partially overlaps at least one photoelectric conversion device of the first photoelectric conversion device or the second photoelectric conversion device, and at least one photoelectric conversion device of the first photoelectric conversion device, the second photoelectric conversion device, or the third photoelectric conversion device includes an organic light absorbing material, a quantum dot, or a combination thereof.

The invention discloses a flexible, energy-self-sufficient UV dosimeter which optically indicates the absorbed dose on the basis of the intensity and duration of the irradiation via a color change. The invention contains one or more UV dosimeter modules. Exemplary UV dosimeter modules include at least one UV-sensitive photodiode (common electrode (11), hole conductor layer (21), UV absorber layer (22), cathode (23)) and an electrochromic element (common electrode (11), ion storage layer (12), electrolyte layer (13), electrochromic layer made of redox active material (14), transparent electrode (15)), between which an insulator (4) and a conductor track (5) are arranged. The electrochromic element accumulates the charge generated by the UV-sensitive photodiode and indicates this by means of a color change. The UV dosimeter can be produced as an integrated circuit using thin-film technology by successively applying and structuring organic or inorganic functional layers.

A light emitting display device includes a substrate that includes a first pixel, a second pixel, a third pixel, and an infrared ray emission portion, the first pixel, the second pixel, and the third pixel representing different colors, a first electrode on the substrate, a second electrode that overlaps the first electrode, an emission layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the emission layer. The emission layer may include a first emission layer in the first pixel and an infrared ray emission layer in the infrared ray emission portion, the auxiliary layer may include a first auxiliary layer in the first pixel, and the infrared ray emission layer and the first auxiliary layer may include the same material.

A micro-structured organic sensor device which has the following layers oriented in parallel to one another: a substrate layer for supporting the further layers; an organic sensor layer for converting a technical quantity to be detected to an electrical quantity; a first electrode layer for contacting the organic sensor layer on a side of the organic sensor layer facing the substrate layer; a second electrode layer for contacting the organic sensor layer on a side of the organic sensor layer facing away from the substrate layer; and one or several functional layers; wherein the sensor layer is structured such that a plurality of horizontally spaced sensor segments are formed; wherein at least one of the electrode layers is structured such that a plurality of horizontally spaced electrode segments are formed so that at least one of the electrode segments of the respective electrode layer is associated to each of the sensor segments; and wherein the one or several functional layers at least partly fill gaps located horizontally between the sensor segments.

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.

The invention concerns a liquid crystal spatial light modulator (101) comprising: a liquid crystal layer (7); and on at least one side of the liquid crystal layer (7), at least one photovoltaic cell (456), each photovoltaic cell (456) comprising a photosensitive layer (5) comprising electron-donating (D) molecules and electron accepting (A) molecules, each photovoltaic cell (456) being arranged for spontaneous photovoltage under illumination. Electron-donating molecules and electron accepting molecules are preferably blended and form preferably an organic bulk heterojunction layer. The photosensitive layer (5) of each photovoltaic cell (456) is preferably comprised between: an electron conducting layer (4) arranged for a transfer of an electron from its contacting photosensitive layer (5) easier than a transfer of an electron hole from its contacting photosensitive layer (5), and an electron hole conducting layer (6) arranged for a transfer of an electron hole from its contacting photosensitive layer (5) easier than a transfer of an electron from its contacting photosensitive layer (5).

A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.