Photoelectronic devices using perovskite single-crystal materials having a narrow spectral response, e.g., with a full-width-at-half-maximum response of less than about 20 nm, are provided. The response spectra are continuously (in frequency band) settable or tunable, e.g., from blue to red, by changing the halide composition and thus the band gap of the single crystals. The narrow-band response can be explained by the strong surface charge recombination of the excess carriers close to the crystal surfaces generated by short wavelength light. The excess carriers generated by below-band gap excitation locate away from the surfaces and can be much more efficiently collected by the electrodes to produce a photocurrent.

A sensor device for detecting an incident energy beam, the sensor device having stacked layers, the layers having: a first photodiode layer, at least four measuring contacts being arranged on electrode layers of the first photodiode layer, at each of which a partial current of a photocurrent dependent on the incident energy beam can be tapped, to determine an x and y coordinate in the three-dimensional coordinate system; and a second photodiode layer fixed to the first photodiode layer, at least four measuring contacts being arranged on electrode layers of the second photodiode layer, at each of which a partial current of a photocurrent dependent on the incident energy beam can be tapped, to determine an x and y coordinate in the three-dimensional coordinate system; wherein at least one of the photodiode layers is transparent.

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 m or more.

Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.

According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3). ##STR00001##

Disclosed herein is a detector including (i) a transversal optical sensor adapted to determine a transversal position of a light beam traveling from the object to the detector, wherein the transversal optical sensor has a photosensitive layer embedded between at least two conductive layers such that at least one of the conductive layers contains an at least partially transparent graphene layer on an at least partially transparent substrate, and wherein the transversal optical sensor generates a transversal sensor signal indicative of the transversal position of the light beam in the photosensitive layer, and (ii) an evaluation device designed to generate at least one item of information on a transversal position of the object by evaluating the at least one transversal sensor signal.

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a plurality of first photoelectric converters that is periodically arranged in each of a first direction and a second direction orthogonal to each other and each detects light in a first wavelength range and each photoelectrically converts the light; and one second photoelectric converter that is stacked on the first photoelectric converter in a stacking direction orthogonal to both the first direction and the second direction, and detects light in a second wavelength range having passed through the plurality of first photoelectric converters and photoelectrically converts the light, in which n times (n is a natural number) a first arrangement period of the plurality of first photoelectric converters in the first direction is substantially equal to a first dimension of the one second photoelectric converter in the first direction, and n times (n is a natural number) a second arrangement period of the plurality of first photoelectric converters in the second direction is substantially equal to a second dimension of the one second photoelectric converter in the second direction.