A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

A device for detecting electromagnetic radiation includes at least one row of photoresistors. Each of the photoresistors includes an active portion containing organic semiconductor materials.

The present invention aims to provide a laser light detecting device capable of easily detecting laser light irradiation. Provided is a laser light detecting device capable of detecting laser light irradiation, including: a luminescent sheet containing a thermoplastic resin and a luminescent material that is to be excited by laser light to emit visible light.

A micro-structured organic sensor device which has the following layers oriented in parallel to one another: a substrate layer for supporting the further layers; an organic sensor layer for converting a technical quantity to be detected to an electrical quantity; a first electrode layer for contacting the organic sensor layer on a side of the organic sensor layer facing the substrate layer; a second electrode layer for contacting the organic sensor layer on a side of the organic sensor layer facing away from the substrate layer; and one or several functional layers; wherein the sensor layer is structured such that a plurality of horizontally spaced sensor segments are formed; wherein at least one of the electrode layers is structured such that a plurality of horizontally spaced electrode segments are formed so that at least one of the electrode segments of the respective electrode layer is associated to each of the sensor segments; and wherein the one or several functional layers at least partly fill gaps located horizontally between the sensor segments.

Detectors and methods of forming the same include aligning a semiconducting carbon nanotubes on a substrate in parallel to form a nanotube layer. The aligned semiconducting carbon nanotubes in the nanotube layer are cut to a uniform length corresponding to a detection frequency. Metal contacts are formed at opposite ends of the nanotube layer.

A charged particle counting device, a manufacturing method thereof, and a charged particle counting system are provided. The charged particle counting device includes: a bipolar transistor (10) and a magneto-electric induction coil (20), a gate (101) of the bipolar transistor is electrically connected to an end of the magneto-electric induction coil, and the other end of the magneto-electric induction coil is applied with a constant voltage, when a stream of positively charged particles passes through the magneto-electric induction coil and a first induced voltage generated by the magneto-electric induction coil is greater than a predetermined voltage threshold, a channel of the bipolar transistor is an N-type channel; and when a stream of negatively charged particles passes through the magneto-electric induction coil and a second induced voltage generated by the magneto-electric induction coil is less than the predetermined voltage threshold, the channel of the bipolar transistor is a P-type channel.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

A device includes a light-emitting diode (LED) integrated with a photodetector on the same semiconductor platform, such that the photocurrent generated by the photodetector can be used to monitor the optical output of the LED, which is located adjacent to the photodetector. The device provides a compact, robust, reliable and low-cost way of monitoring LED emission.