According to an aspect, a detection device includes: a light source configured to emit light to an object to be detected; a plurality of photodiodes arranged in a detection area; one or more detection circuits; and a coupling switching circuit configured to switch coupling of one or more of the photodiodes to one or more of the detection circuits. The coupling switching circuit is configured to change the number of the detection circuits coupled to one or more of the photodiodes based on an output value from one or more of the photodiodes.

A solar battery cell, comprises a substrate; a first electrode provided on the substrate; a photoelectric conversion layer provided on the first electrode; a second electrode provided on the photoelectric conversion layer; and a barrier layer so provided as to cover a side portion of the photoelectric conversion layer, wherein the photoelectric conversion layer has an electron transport layer, a light absorption layer provided on the electron transport layer, and a hole transport layer provided on the light absorption layer, the light absorption layer includes a compound having a perovskite crystal structure, and the barrier layer is a dense inorganic material layer.

An electronic device including: a base layer; a display element layer disposed on the base layer and including a pixel defining layer that includes an opening, and a light emitting element and a light receiving element, which are separated by the pixel defining layer; and an input sensing layer disposed on the display element layer, wherein each of the light emitting element and the light receiving element includes: a first electrode; a hole transport region disposed on the first electrode; an electron transport region disposed on the hole transport region; and a second electrode disposed on the electron transport region, wherein the second electrode is a common layer in the light emitting element and the light receiving element, the light emitting element comprises a light emitting layer disposed between the hole transport region and the electron transport region, and the light receiving element comprises a light receiving layer which is provided between the first electrode and the second electrode and disposed in a layer different from the light emitting layer in a thickness direction of the electronic device.

An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel portion, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel portion and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, so that power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are formed to be stacked; therefore, the length of a wiring between the circuits can be shortened, and a low-power consumption operation and a high-speed operation can be performed.

The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

Methods are provided for fabricating photodetector arrays using passive matrix addressing technology. The photodetector arrays use a pair of switching diode and photo diode to overcome crosstalk issues within the passive matrix. The switching diode and the photo diode of each pixel may be connected using a cathode-to-cathode connection, or an anode-to-anode connection. The photodetector arrays are fabricated by assembling on a first substrate, an array of photodetector pixels comprising a switching diode and a photo diode, providing conductive lines for each row of the array and conductive lines for each column of the array, and attaching a second substrate to the first substrate. The photodetector array may also be fabricated by assembling on a first substrate an array of switching diodes, and assembling on a second substrate an array of photo diodes, and bonding the first and second substrates together.

A solid-state imaging element (1) according to the present disclosure includes a pixel array unit (10) in which a plurality of light receiving pixels (11) is two-dimensionally arranged. Each of the light receiving pixels (11) includes an organic photoelectric conversion unit (61) and another photoelectric conversion unit. The organic photoelectric conversion unit (61) includes a photoelectric conversion layer (63) made of an organic semiconductor material, a first electrode (62) located on a light incident side of the photoelectric conversion layer (63), and a second electrode (65) located on a side opposite to the light incident side of the photoelectric conversion layer (63). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (61), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (61). The second electrode (65) is connected to a connection wiring (51) including a metal wiring (54) made of metal and a transparent wiring (53) made of a transparent conductive film. The metal wiring (54) extends in a horizontal direction from a peripheral portion of the light receiving pixel (11) to a peripheral portion of the pixel array unit (10).

Methods are provided for fabricating photodetector arrays using passive matrix addressing technology. The photodetector arrays use a pair of switching diode and photo diode to overcome crosstalk issues within the passive matrix. The switching diode and the photo diode of each pixel may be connected using a cathode-to-cathode connection, or an anode-to-anode connection. The photodetector arrays are fabricated by assembling on a first substrate, an array of photodetector pixels comprising a switching diode and a photo diode, providing conductive lines for each row of the array and conductive lines for each column of the array, and attaching a second substrate to the first substrate. The photodetector array may also be fabricated by assembling on a first substrate an array of switching diodes, and assembling on a second substrate an array of photo diodes, and bonding the first and second substrates together.

A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating that includes at least two spaced apart second electrode sections of adjacent unit devices, each second electrode section being positioned to overlay at least one functional section of the second functional layer and a portion of an adjoining gap portion that includes at least one portion of the first electrode section of an adjacent unit device, the third patterned coating being formed using a solution including a conductive species and at least a first solvent, wherein the first functional layer is soluble in the first solvent and the second functional layer has a low to zero solubility in the first solvent, such that application of the second electrode layer to the gap portion forms at least one electrically conductive path through the first functional layer between the first electrode and the second electrode of adjacent unit devices.

Disclosed is a bio sensing device including a medium layer, a light emitting element and an optical sensor. The light emitting element is configured to emit a light toward a user's skin layer, in which the light passes through the medium layer and has a maximum intensity in a first wavelength. The optical sensor is configured to receive a reflected part of the light from the user's skin layer, in which the reflected part of the light passes through the medium layer, and the medium layer has a first transmittance greater than 60% with respect to the first wavelength.