Manufacturing method including forming, over substrate, TFT layer, planarization layer, and display element in this order. Forming of TFT layer involves forming passivation layer to cover TFT layer electrode, such as upper electrode, and to come in contact with planarizing layer. Forming of display element involves forming bottom electrode to come in contact with planarizing layer. TFT layer electrode and bottom electrode are connected by: first forming, in planarizing layer, first contact hole exposing passivation layer at bottom thereof; then forming second contact hole exposing TFT layer electrode at bottom thereof through dry-etching passivation layer exposed at bottom of first contact hole using fluorine-containing gas; then forming liquid repellent film containing fluorine on passivation layer inner surface facing second contact hole; and forming bottom electrode along planarizing layer inner surface and passivation layer inner surface respectively facing first contact hole and second contact hole.

A thin film transistor array substrate includes a thin film transistor including a first gate electrode, an active layer, a source electrode, and a drain electrode. A first conductive layer pattern is on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode. An insulating layer is on the first conductive layer pattern and has an opening exposing a patterning cross-section of the first conductive layer pattern. A pixel electrode is on the insulating layer and is coupled to the source electrode or the drain electrode through a contact hole passing through the insulating layer. A diffusion prevention layer covers the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening.

A composition for forming a colored layer contains a dye, an active energy radiation-curable resin, a photoinitiator, a solvent, and an additive. The dye contains at least one of a first coloring material, a second coloring material, and a third coloring material, with the wavelength of maximum absorption within the range of 470 to 530 nm and the full width at half maximum of the absorption spectrum is 15 to 45 nm. The wavelength of maximum absorption of the second coloring material is within the range of 560 to 620 nm and the full width at half maximum of the absorption spectrum is 15 to 55 nm. Within the wavelength range of 380 to 780 nm, the third coloring material exhibits the lowest transmittance in the range of 650 to 780 nm. The additive includes a compound A and a sulfur antioxidant.

The present disclosure provides a metal complex that can achieve both productivity in the production of an organic light-emitting device and high emission characteristics, the metal complex being represented by general formula (1) below.

M represents Pt, Pd, or Ni. R.sub.1 to R.sub.10 are each independently selected from a hydrogen atom and an alkyl group, provided that at least one of R.sub.1 to R.sub.10 is an alkyl group having 2 or more carbon atoms. XY represents a bidentate ligand and is OO, NO, CN, or NN.

A polymer compound comprising a structural unit represented by the formula (1):

##STR00001## wherein a ring A and a ring B represent a heterocyclic ring. A ring C represents a condensed aromatic heterocyclic ring not having a line-symmetric axis and a rotational axis. Z.sup.1 and Z.sup.2 represent a group represented by the formula (Z-1), a group represented by the formula (Z-2), a group represented by the formula (Z-3), a group represented by the formula (Z-4), a group represented by the formula (Z-5), a group represented by the formula (Z-6) or a group represented by the formula (Z-7).

##STR00002## R represents an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an alkylthio group, a cycloalkylthio group, an aryl group or a monovalent heterocyclic group.].

Methods of metal-catalysed polymerisation are described using a metal catalyst of formula (III):

##STR00001##

wherein R.sup.3 in each occurrence is independently selected from C.sub.1-10 alkyl and aryl that may be unsubstituted or substituted with one or more substituents; y is 0 or 2; and Z.sup.is an anion. Methods described include Buchwald-type and Suzuki-type polymerisation.

A light-emitting device and a manufacturing method therefor, a display apparatus comprising the light-emitting device, and an optical detection apparatus comprising the light-emitting device. The light-emitting device includes a substrate, and an anode, a hole injection layer, a hole-transmission layer, a light emitting layer, an electron transmission layer, and a cathode sequentially stacked on the substrate. The material for forming the hole-transmission layer and/or the electron transmission layer includes a photoconductive high polymer material.

The present application relates to a substituted benzanthracene compound of a formula (I) or (II). The application furthermore relates to an electronic device which comprises the said benzanthracene compound.

A method and device for improving junctions in an organic, polymer, thin-film semiconductor device, and for facilitating the formation of a Schottky barrier between a polymer film and silicide film.

A composition comprising: a light emitting material; and a polymer compound having a constitutional sequence represented by the following formula (1) as a main chain:
-[(Y).sub.nZ].sub.m-(1) in the formula, Y represents a divalent group, in which two hydrogen atoms are removed from a structure represented by the following formula (Y-1) or (Y-2), Z represents a divalent group, in which two hydrogen atoms are removed from a structure represented by the following formula (Z-1), (Z-2), (Z-3), (Z-4), (Z-5), (Z-6), (Z-7), or (Z-8), m represents an integer of 4 to 10,000, and n represents an integer of 1 to 3.