A method of fabricating an organic light-emitting device, including: providing a substrate; forming a control electrode on the substrate; forming an insulating layer covering at least a top surface of the control electrode; forming a hole transport layer pattern through printing on at least a part of the insulating layer; forming an organic light-emitting layer to be in contact with at least a part of a surface of the hole transport layer pattern; forming an electron transport layer pattern through printing to be in contact with at least a part of a surface of the organic light-emitting layer; and forming a first electrode and a second electrode respectively on the hole transport layer pattern and the electron transport layer pattern.

A method of making an OLED device includes providing a first undercut lift-off structure over the device substrate having a first array of bottom electrodes. Next, one or more first organic EL medium layers including at least a first light-emitting layer are deposited over the first undercut lift-off structure and over the first array of bottom electrodes. The first undercut lift-off structure and overlying first organic EL medium layer(s) are removed by treatment with a first lift-off agent comprising a fluorinated solvent to form a first intermediate structure. The process is repeated using a second undercut lift-off structure to deposit one or more second organic EL medium layers over a second array of bottom electrodes. After removal of the second undercut lift-off structure, a common top electrode is provided in electrical contact with the first and second organic EL medium layers.

In some examples, an organic light emitting transistor (OLET) comprises a substrate layer; a gate electrode disposed on the substrate layer; and a dielectric layer disposed on the gate electrode. The OLET further comprises a first organic semiconductor layer (OSL) disposed on the dielectric layer; a second OSL disposed on the first OSL; a third OSL disposed on the second OSL; a drain electrode disposed on the third OSL; a first source electrode partially disposed on both the first OSL and the third OSL; and a second source electrode partially disposed on both the first OSL and the third OSL, wherein a length of the first OSL is larger than lengths of both the second and third OSLs, and wherein a width of the first OSL is smaller than widths of both the second and third OSLs.

A two-dimensional (2D) hybrid perovskite based opto-electric device includes first and second 2D perovskite layers extending along a given plane; an organic layer sandwiched between the first and second 2D perovskite layers, and extending along the given plane; an external organic layer formed on the first 2D perovskite layer and configured to directly face an ambient of the opto-electric device and to extend along the given plane; and electrical pads directly formed over the external organic layer. A roughness of the external organic layer is smaller than 10 nm.

A display panel disclosed in the application includes a display region and a peripheral region. The display panel includes a substrate and at least one dam disposed on the substrate. The dam is in the peripheral region. An anode is disposed on the substrate and is in the peripheral region. A plurality of holes is provided on the anode to expose the dam. In a direction which the display region faces the peripheral region, a size of the holes is greater than a size of the dam.

The present disclosure relates to an organic luminescent substrate. The organic luminescent substrate may include a first organic luminescent field effect transistor and a second organic luminescent field effect transistor. The first organic luminescent field effect transistor may include a first gate electrode, a first electrode, a second electrode, and a first active luminescent layer. The second organic luminescent field effect transistor may include a second gate electrode, a third electrode, a fourth electrode, and a second active luminescent layer. One of the first organic luminescent field effect transistor and the second organic luminescent field effect transistor may be an N-type transistor and the other one may be a P-type transistor. The first gate electrode may be coupled to the second gate electrode.

A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

The present disclosure relates to a pixel circuit, a driving method therefor, and a display apparatus. The pixel circuit includes an input sub-circuit, a light emission control sub-circuit and an organic light-emitting transistor. The input sub-circuit is coupled to a gate line, a data line and the light emission control sub-circuit and writes a data signal supplied via the data line into the light emission control sub-circuit under control of a gate scan signal supplied via the gate line. The light emission control sub-circuit is coupled to a control electrode of the organic light-emitting transistor and controls a control electrode voltage of the organic light-emitting transistor according to a written data signal to drive the organic light-emitting transistor to emit light. With the pixel circuit according to embodiments of the present disclosure, active driving of an organic light-emitting transistor is achieved when it is applied in a display apparatus.

Provided are a display panel, a manufacturing method thereof and a display apparatus. The display panel includes a fingerprint identification sensor, a first light shield layer disposed on the fingerprint identification sensor and a color film layer disposed on the first light shield layer, wherein the color film layer includes color filters with different colors and light transmission parts disposed between the color filters with different colors; the first light shield layer includes first openings and light shield parts, the light transmission parts and the first openings are used for allowing fingerprint reflected light to transmit and reach the fingerprint identification sensor, and the light shield parts are used for blocking out stray light.

Provided is a device for emitting electromagnetic radiation. The device includes a first electrode, a second electrode, and an exciton recombination layer extending from the first electrode to the second electrode. The device is configured to relocate a recombination zone in the exciton recombination layer by changing an electric field between the first electrode and the second electrode, or to emit electromagnetic radiation through a transparent substrate.