H10K50/30

Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays
11177465 · 2021-11-16 · ·

Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

Carbon enabled vertical organic light emitting transistors
11785791 · 2023-10-10 · ·

Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.

Carbon enabled vertical organic light emitting transistors
11785791 · 2023-10-10 · ·

Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.

Organic electroluminescent device emitting blue light
11165035 · 2021-11-02 · ·

The present invention relates to organic electroluminescent devices comprising a light-emitting layer B comprising two host materials, a n-type (electron-transporting) and a p-type (hole-transporting) host material, a thermally activated delayed fluorescence (TADF) material and an emitter material, which exhibits a narrow—expressed by a small full width at half maximum (FWHM)—deep-blue emission at an emission maximum of 440 to 475 nm. Further, the present invention relates to a method for generating blue light by means of an organic electroluminescent device according to the present invention.

Layered metal oxide field effect material and its application
11165031 · 2021-11-02 · ·

A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (ΔE)≥1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 10.sup.3 cm.sup.2/V.Math.s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required.

DISPLAY
20230320149 · 2023-10-05 ·

A liquid crystal display device includes: a substrate; a plurality of vertical organic light-emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light-emitting transistor; a thin-film transistor that is connected between the gate electrode of each of the vertical organic light-emitting transistors and the data line and controls supply of the voltage to the gate electrode of the vertical organic light-emitting transistor; a gate line that is connected to the gate electrode of the thin-film transistor and transmits a signal for switching the thin-film transistor; and a plurality of current supply lines that are wired in a first direction outside a formation region of the vertical organic light-emitting transistor, the current supply lines being in contact with a source electrode of the vertical organic light-emitting transistor to supply a current to the vertical organic light-emitting transistor.

DISPLAY
20230320149 · 2023-10-05 ·

A liquid crystal display device includes: a substrate; a plurality of vertical organic light-emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light-emitting transistor; a thin-film transistor that is connected between the gate electrode of each of the vertical organic light-emitting transistors and the data line and controls supply of the voltage to the gate electrode of the vertical organic light-emitting transistor; a gate line that is connected to the gate electrode of the thin-film transistor and transmits a signal for switching the thin-film transistor; and a plurality of current supply lines that are wired in a first direction outside a formation region of the vertical organic light-emitting transistor, the current supply lines being in contact with a source electrode of the vertical organic light-emitting transistor to supply a current to the vertical organic light-emitting transistor.

DISPLAY PANEL AND DISPLAY APPARATUS
20230298381 · 2023-09-21 ·

Provided are a display panel and a display apparatus. The display panel includes a sensor area, a first light shield layer disposed above the sensor area, and a color film layer disposed above the first light shield layer, the color film layer includes color filters with different colors and a light transmission part disposed between the color filters with different colors; the first light shield layer includes a first opening and a light shield part, the light transmission part and the first opening are configured to allow at least partial light to transmit the sensor area and the color film layer further includes a first black matrix disposed between the color filters with different colors, the first black matrix is provided with a second opening which forms the light transmission part. The display panel includes a touch structure layer, the touch structure layer includes a plurality of touch electrodes.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device includes a transistor on a base layer, the transistor including an active layer, a gate electrode, a first transistor electrode electrically connected to a first contact region of the active layer, and a second transistor electrode electrically connected to a second contact region of the active layer; an interlayer insulating layer on the gate electrode; a bank on the interlayer insulating layer and protruding in a thickness direction of the base layer; a color conversion layer between banks and including quantum dots that change a color of light; and a light emitting element on the color conversion layer, and a reflective electrode layer is on the bank.

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

A display device includes a transistor on a base layer, the transistor including an active layer, a gate electrode, a first transistor electrode electrically connected to a first contact region of the active layer, and a second transistor electrode electrically connected to a second contact region of the active layer; an interlayer insulating layer on the gate electrode; a bank on the interlayer insulating layer and protruding in a thickness direction of the base layer; a color conversion layer between banks and including quantum dots that change a color of light; and a light emitting element on the color conversion layer, and a reflective electrode layer is on the bank.