Provided is a light-emitting device including: a first electrode; a second electrode facing the first electrode; an interlayer between the first electrode and the second electrode, the interlayer including an emission layer; and an electron transport region between the second electrode and the emission layer, wherein the first electrode may be an anode, the second electrode may be a cathode, and the electron transport region may include an acid generator.

The present invention relates to a composition which comprises an electron-transporting host and a hole-transporting host, to the use thereof in electronic devices and to electronic devices containing this composition. The electron-transporting host is particularly preferably selected from the class of the triazine-dibenzofuran-carbazole systems or the class of the triazine-dibenzothiophene-carbazole systems. The hole-transporting host is preferably selected from the class of the biscarbazoles.

The present invention relates to a composition which comprises an electron-transporting host and a hole-transporting host, to the use thereof in electronic devices and to electronic devices containing this composition. The electron-transporting host is particularly preferably selected from the class of the triazine-dibenzofuran-carbazole systems or the class of the triazine-dibenzothiophene-carbazole systems. The hole-transporting host is preferably selected from the class of the biscarbazoles.

A source to facilitate precise vapor deposition in processes to obtain organic light emitting diodes (OLEDs) in a display panel, includes forming a plurality of grooves on a first substrate; in filling organic light emitting materials into the grooves and providing a second substrate to receive the vaporized organic light emitting materials. The first substrate is aligned with the second substrate and the first substrate is heated to vaporize the organic light emitting materials in the grooves. The vapor deposition regions of the second substrate form an organic light emitting material layer after the deposition, the layer can then be used in an OLED display panel. The shadow effect is greatly reduced, a method for the procedure is also disclosed.

A source to facilitate precise vapor deposition in processes to obtain organic light emitting diodes (OLEDs) in a display panel, includes forming a plurality of grooves on a first substrate; in filling organic light emitting materials into the grooves and providing a second substrate to receive the vaporized organic light emitting materials. The first substrate is aligned with the second substrate and the first substrate is heated to vaporize the organic light emitting materials in the grooves. The vapor deposition regions of the second substrate form an organic light emitting material layer after the deposition, the layer can then be used in an OLED display panel. The shadow effect is greatly reduced, a method for the procedure is also disclosed.

A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.

A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.

Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include triisopropyl phosphite (TIPP), bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphate (B PEDP), tris(2, 4-di-tert-butylphenyl)phosphite (TDTBPP), triethylphosphite, tris(2-ethylhexylphosphite), tris(trimethylsilyl)phosphite, triphenylphosphite, triphenyl phosphine, tris(4-methoxyphenyl)phosphine, tris(1-pyrrolidinyl)phosphine, tri(2-furyl)phosphine, or tris(dimethylamino)phosphine.

Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include triisopropyl phosphite (TIPP), bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphate (B PEDP), tris(2, 4-di-tert-butylphenyl)phosphite (TDTBPP), triethylphosphite, tris(2-ethylhexylphosphite), tris(trimethylsilyl)phosphite, triphenylphosphite, triphenyl phosphine, tris(4-methoxyphenyl)phosphine, tris(1-pyrrolidinyl)phosphine, tri(2-furyl)phosphine, or tris(dimethylamino)phosphine.

According to one embodiment, a processing substrate is prepared. An organic layer is formed. An etching stopper layer is formed. The forming the etching stopper layer includes, in a first mode, inclining an evaporation source, and depositing a material emitted from the evaporation source while relative positions of the evaporation source and the processing substrate are changed, and in a second mode, inclining the evaporation source in a manner different from the first mode, and depositing the material emitted from the evaporation source while the relative positions of the evaporation source and the processing substrate are changed in an opposite manner of the first mode.