A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

A method for in-situ measuring electrical properties of carbon nanotubes includes placing a first electrode in a chamber, wherein the first electrode defines a cavity. A growth substrate is suspend inside of the cavity, and a catalyst layer is located on the growth substrate. A measuring meter having a first terminal and a second terminal opposite to the first terminal is provided. The first terminal is electrically connected to the first electrode, and the second terminal is electrically connected to the growth substrate. A carbon source gas, a protective gas, and hydrogen are supplied to the cavity, to grow the carbon nanotubes on the catalyst layer. The electrical properties of the carbon nanotubes are obtained by the measuring meter.

The present disclosure discloses an organic light emitting diode substrate and a method for manufacturing the same. In one embodiment of the present disclosure, an organic light emitting diode substrate includes a display region in which an organic film layer that is formed by curing an ink layer is provided, and a border region located outside the display region and including an exposed area in which no organic film layer is provided. The organic light emitting diode substrate further includes: a barrier structure located in the border region and adapted for preventing the ink layer from coming into contact with a surface of the exposed area.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

The present disclosure discloses a quantum dot material, a quantum dot light-emitting device, a display device, and a manufacturing method to solve the problems in the prior art that carrier transport is hindered, the electrical performance of the device is reduced, and the luminous efficiency is reduced after a quantum dot film layer is patterned. The quantum dot material includes: a quantum dot body, linkers, and first ligands; wherein one ends of the linkers are connected with the quantum dot body, and the other ends of the linkers are connected with the first ligands; and each first ligand includes one or a combination of:

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A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX.sub.3 and a second layer that includes a perovskite-like material defined by at least one of A′.sub.2B′X′.sub.4, A′.sub.3B′.sub.2X′.sub.9, A′B′X′.sub.4, A′.sub.2B′X′.sub.6, and/or A′.sub.2AB′.sub.2X′.sub.7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.

The present invention relates to compounds, compositions and formulations comprising same and to opto-electronic devices comprising the compounds and compositions according to the invention.