The present invention relates to a semiconducting material comprising an electron transport matrix compound comprising at least one electron transporting structural moiety and at least one polar structural moiety; a matrix compound and electronic device utilizing the semiconducting material.

An organic light emitting diode and a manufacturing method thereof, and a display panel are provided. The organic light emitting diode includes an anode layer, a hole transport layer, and a hole injection layer located between the anode layer and the hole transport layer. The hole injection layer has a work function of which a value increases in a direction from the anode layer toward the hole transport layer, and thus, an injection barrier between the anode layer and the hole transport layer is reduced and thereby improving the luminescent efficiency of the organic light emitting diode.

An organic light emitting diode and a manufacturing method thereof, and a display panel are provided. The organic light emitting diode includes an anode layer, a hole transport layer, and a hole injection layer located between the anode layer and the hole transport layer. The hole injection layer has a work function of which a value increases in a direction from the anode layer toward the hole transport layer, and thus, an injection barrier between the anode layer and the hole transport layer is reduced and thereby improving the luminescent efficiency of the organic light emitting diode.

The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.

A compound represented by the formula (1) is provided:

##STR00001##

wherein A.sup.1 represents an oxygen atom, a sulfur atom, NR.sup.5 or PR.sup.5; at least one A.sup.1 is NR.sup.5 or PR.sup.5; R.sup.1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylsulfenyl group, a cycloalkylsulfenyl group, an arylsulfenyl group or a disubstituted amino group; R.sup.2 and R.sup.3 represent an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylsulfenyl group, a cycloalkylsulfenyl group, an arylsulfenyl group, a monovalent heterocyclic group, a halogen atom or a disubstituted amino group; R.sup.4 represents a hydrogen atom, C(R.sup.6).sub.3, OR.sup.7, N(R.sup.7).sub.2 or Si(R.sup.7).sub.3; m represents an integer of 0 to 3; and n represents an integer of 0 to 4.

Disclosed is an array substrate, a method for manufacturing the array substrate, and a display device. The array substrate includes: a plurality of pixel units arranged in an array, each pixel unit being provided with one thin film transistor including an active layer and a polymer film on array. The polymer film on array is formed with a first via hole, and the active layer is conductive in a region thereof corresponding to the first via hole, such that a pixel electrode located on the polymer film on array is electrically connected to the source through the first via hole.

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

Provided is a photoelectric conversion element including a first electrode, a hole blocking layer, an electron transport layer, a first hole transport layer, and a second electrode, wherein the first hole transport layer includes at least one of basic compounds represented by general formula (1a) and general formula (1b) below: ##STR00001##
where in the formula (1a) or (1b), R.sub.1 and R.sub.2 represent a substituted or unsubstituted alkyl group or aromatic hydrocarbon group and may be identical or different, and R.sub.1 and R.sub.2 may bind with each other to form a substituted or unsubstituted heterocyclic group containing a nitrogen atom.

An array substrate, a manufacturing method for same, and a display panel are provided. In the manufacturing method, ion doping is performed once on an active layer, and the doped active layer forms a first doped region and a second doped region through a predetermined process. On the basis of a current process and without increasing the quantity of masks, a PMOS LDD structure is added to an AMOLED. This effectively reduces a period of a panel array manufacturing process and reduces manufacturing costs.