Patent classifications
H10K71/30
ORGANIC SEMICONDUCTOR COMPOSITION AND SEMICONDUCTING LAYER OBTAINED THEREFROM
The present invention concerns a composition comprising at least one crystalline organic semiconductor and at least one triarylamine of formula provided at least one of Ar.sub.1, Ar.sub.2 and Ar.sub.3 comprises at least two fused aromatic rings.
##STR00001##
Organic electronic/optoelectronic devices
An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.
MOLECULAR DOPING ENABLED SCALABLE BLADING OF EFFICIENT HOLE TRANSPORT LAYER-FREE PEROVSKITE SOLAR CELLS
A method of forming a photoactive device includes steps of: forming a photoactive layer, the photoactive layer comprising a perovskite material and a dopant; wherein the photoactive device comprises a positive electrode and a negative electrode; wherein said photoactive layer is directly or indirectly in electronic communication with the positive electrode and directly or indirectly in electronic communication with the negative electrode; and wherein the photoactive device is free of a hole transport layer between the photoactive layer and the positive electrode.
Display device and method for manufacturing display device
To provide a display device including a plurality of pixels; a light emitting element layer formed across the plurality of pixels; and a bank formed so as to separately define adjacent pixels among the plurality of pixels, wherein the light emitting element layer includes a p-doped hole transport layer containing p-dopant, and the p-doped hole transport layer is formed on each of the pixels such that the p-doped hole transport layers on the respective adjacent pixels are separated from each other on the bank.
Hole transporting material, OLED display panel and electronic device comprising the same
The present invention relates to a hole transporting material having a structure of formula (I). (1) The present invention provides a hole transporting material having at least one benzene ring with non-hydrogen substituent(s) in the formula and being capable of obtaining a suitable mobility rate without occurrence of crosstalk between pixels. (2) The hole transporting material provided by the present invention is capable of satisfying the requirements on MASK cleaning in terms of solubility (NMP solvent).
DOPED ORGANIC CARRIER TRANSPORT MATERIALS
The present invention provides for organometallic and organic dopants suitable for use in organic carrier transporting materials. Also provided are organic light emitting devices containing doped organic carrier transporting materials.
COMPOSITION, ORGANIC PHOTOELECTRONIC ELEMENT, AND PRODUCTION METHODS THEREFOR
To provide a composition having a very low refractive index, an organic photoelectronic element using the composition, and simple methods for producing such a composition and an organic photoelectronic element.
A composition comprising a fluorinated polymer, an organic semiconductor material and a dopant.
Quinoid compounds and their use in semiconducting matrix materials, electronic and optoelectronic structural elements
The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.
Field effect transistor with p-doped carbon nanotube channel region and method of fabrication
Electrical device comprising a field effect transistor (FET). The FET includes a substrate with a channel region thereon, the channel region including a film of single-walled carbon nanotubes located on the substrate, metallic source and drain electrodes layers on the channel region and gate structure covering a portion of channel region and located between the metallic source and drain electrode layers. The gate structure includes a gate dielectric layer on the portion of the channel region and a gate electrode layer on the gate dielectric layer. Other non-gate-covered portions of the channel region are located between the source electrode layer and the gate structure and between the drain electrode layer and the gate structure. The FET includes a stoichiometrically oxygen-reduced silicon oxide layer contacting the non-gate-covered portions of the channel region, wherein the stoichiometrically oxygen-reduced silicon oxide composition includes SiO.sub.x where x has a value of less than 2.
Formation of films for organic photovoltaics
A process of reacting (SnO.sub.x).sub.yZnO.sub.(1-y) and a fullerene dopant to produce an electron transport layer. (SnO.sub.x).sub.yZnO.sub.(1-y) is produced from reacting an organic Zn precursor in the amounts of (1-y); an organic Sn precursor in the amounts of y; and a base in the amount of (1-y) to 1.