A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R.sup.1 and R.sup.2 can independently be oxygen, sulfur, selenium, NH or NR.sup.4, where R.sup.4 an alkyl or aryl and can be connected to R.sup.3. R.sup.3 is an alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, halogenalkyl, aryl, arylene, halogenaryl, heteroaryl, heteroarylene, heterocycloalkylene, heterocycloalkyl, halogenheteroaryl, alkenyl, halogenalkenyl, alkynyl, halogenalkynyl, ketoaryl, halogenketoaryl, ketoheteroaryl, ketoalkyl, halogenketoalkyl, ketoalkenyl, halogenketoalkenyl, where in suitable radicals, one or more non-adjacent CH.sup.2 groups can be substituted independently of one another by O, S, NH, NR.sup.o, SiR.sup.oR.sup.oo, CO, COO, OCO, OCOO, SO.sub.2, SCO, COS, CY1=CY2 or CC, specifically in such a way that O and/or S atoms are not connected directly to one another, are likewise optionally substituted with aryl- or heteroaryl preferably containing 1 to 30 C atoms, as a dopant for matrix materials in organic electronic components.

The invention relates to an electronic device comprising a compound having Formula (1): AB.sub.x (1), wherein A is a structural moiety that consists of at least two atoms and comprises a conjugated system of delocalized electrons, each B is independently selected from an imine functional group (1a), wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 are independently selected from C.sub.1-C.sub.30 alkyl, C.sub.2-C.sub.30 alkenyl, C.sub.2-C.sub.3 alkinyl, C.sub.3-C.sub.30 cycloalkyl, C.sub.6-C.sub.30 aryl, C.sub.2-C.sub.30 heteroaryl, C.sub.7-C.sub.30 arylalkyl, C.sub.3-C.sub.30 heteroarylalkyl, the wave line represents a covalent bond to the imine nitrogen atom, G is in each group (1a) independently selected from a quarternary carbon atom and from a cyclopropenylidene structural moiety, x is an integer equal one or higher, preferably equal two or higher, and the lone electron pair of the imine nitrogen atom and/or the pi-electrons of the imine double bond of at least one group B is conjugated with the conjugated system of delocalized electrons comprised in the structural moiety A, with the proviso that two or more of the substituents R.sup.1, R.sup.2, R.sup.3, R.sup.4 may be connected to form a ring that may contain also unsaturation and, if any of the substituents R.sup.1, R.sup.2, R.sup.3, R.sup.4 comprises two or more carbon atoms, up to one third of the overall count of the carbon atoms in the substituent or in any ring formed by two connected substituents can be replaced with heteroatoms independently selected from O, S, N and B as well as to an electrically semiconducting material and a compound for use in the electronic device. ##STR00001##

A low-resistivity carbon nanotube aggregate includes a plurality of carbon nanotubes each having one or more walls, wherein a ratio of a total number of carbon nanotubes that have two or three walls relative to a total number of said plurality of carbon nanotubes is 75% or greater, and wherein, in a G band of a Raman spectrum in the Raman spectroscopy of the plurality of carbon nanotubes, a G+/Gtotal ratio that is indicative of an amount of semiconductor carbon nanotubes relative to metallic carbon nanotubes is 0.70 or greater.

A light-harvesting material comprises a perovskite absorber doped with a metal chalcogenide. The light-harvesting material may be used in a photovoltaic device, comprising (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material.

The present invention relates to an active-matrix OLED display, comprising a plurality of OLED pixels, wherein each pixel itself comprises a stack of organic layers and each layer of the stack of organic layers can form a common semiconductor layer, whereinat least a first OLED pixel and a second OLED pixel comprisingan anode layer, a common cathode layer, at least one emission layer, which is optional a common emission layer, at least a stack of organic layers.

The present invention concerns a composition comprising at least one crystalline organic semiconductor and at least one compound of formula wherein R.sub.1 and R.sub.2 represent a C.sub.1-C.sub.50 hydrocarbyl or heterohydrocarbyl group, and wherein R.sub.3 and R.sub.4 represent H or a C.sub.1-C.sub.24 hydrocarbyl or heterohydrocarbyl group, and wherein Ar is an aryl or heteroaryl group.

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A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.

An organic field effect transistor includes a semiconductor substrate having an insulating layer and a source electrode and a drain electrode located on the insulating layer, where the source electrode and drain electrode are spaced apart and define a channel region. The organic field effect transistor also includes an organic semiconductor located in the channel region.

Provided is a solar cell comprising a first electrode; a second electrode; a photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoabsorber layer contains a perovskite compound represented by the composition formula AMX.sub.3 (where A represents a monovalent cation, M represents a divalent cation, and X represents a halogen anion). The first semiconductor layer contains Li. The second semiconductor layer contains LiN(SO.sub.2CnF.sub.2n+1).sub.2 (where n is a natural number of not less than 2).

A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A channel material is formed on the dielectric layer. The channel material includes carbon nanotubes. A patterned resist layer has openings formed therein. Metal contacts are formed on the channel material in the openings in the patterned resist layer and over portions of the patterned resist layer to protect sidewalls of the metal contacts to prevent degradation of the metal contacts.