Provided is a method for producing a quantum dot (QD) film, the method including applying a QD solution on a surface of a base portion to form a QD array, performing cross-linking on the formed QD array, doping QDs included in the QD array by reacting the QDs included in the QD array on which cross-linking is completed with a metal solution including a doping metal, and cleaning the QD array to obtain a QD film including the doped QDs.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,
wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

The present invention relates to an ink composition for an organic light emitting device that can be applied to an inkjet process. The ink composition comprises a compound represented by the following Chemical Formula 1, a first solvent of aromatic esters having a boiling point of 260 to 400° C., and a second solvent of aliphatic ethers or aliphatic esters having a boiling point of 200 to 400° C., wherein the boiling point of the first solvent is higher than that of the second solvent. When this is applied to an inkjet process, it can form a flat film with a smooth surface when dried after forming the ink film. ##STR00001##
wherein L, L.sub.1 to L.sub.4, Ar.sub.1, Ar.sub.2, R.sub.1 to R.sub.4, Y.sub.1 to Y.sub.4, and n.sub.1 to n.sub.4 are described herein.

The present invention relates to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby and, more specifically, to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby, wherein the method comprises the steps of: (S1) applying a) an oxidative agent, b) ultraviolet light and ozone, c) oxygen plasma, or d) nitrogen dioxide gas to a hole transport layer (HTL) of a laminate in which a substrate layer, a first electrode layer, and the hole transport layer (HTL) containing a metal oxide are sequentially laminated, to oxidize the metal oxide; and (S2) sequentially laminating a perovskite layer, an electron transport layer, and a second electrode layer on the hole transport layer of the laminate.

The present invention relates to a method for forming a charge transport layer on a substrate. Specifically, the present invention provides a method for manufacturing a device comprising a charge transport layer, which enables a uniform charge transport layer to be formed by a solution process even on a large area substrate. The method for manufacturing a device comprising a charge transport layer, of the present invention, may comprise: a charge forming step of forming first polarity charges on a transparent conductive substrate; a polymer electrolyte coating forming step of forming, on the transparent conductive substrate on which the first polarity charges are formed, a polymer electrolyte coating layer of second polarity charges which have the opposite polarity to that of the first polarity charges; and a first charge transport layer forming step of coating the polymer electrolyte coating layer with nanoparticles having the first polarity charges so as to form a first charge transport layer.

The present invention relates to a method for forming a charge transport layer on a substrate. Specifically, the present invention provides a method for manufacturing a device comprising a charge transport layer, which enables a uniform charge transport layer to be formed by a solution process even on a large area substrate. The method for manufacturing a device comprising a charge transport layer, of the present invention, may comprise: a charge forming step of forming first polarity charges on a transparent conductive substrate; a polymer electrolyte coating forming step of forming, on the transparent conductive substrate on which the first polarity charges are formed, a polymer electrolyte coating layer of second polarity charges which have the opposite polarity to that of the first polarity charges; and a first charge transport layer forming step of coating the polymer electrolyte coating layer with nanoparticles having the first polarity charges so as to form a first charge transport layer.