Provided are a photoelectric conversion element that displays excellent photoelectric conversion efficiency and is easy to produce and a method of producing this photoelectric conversion element. A photoelectric conversion element (100) includes, in stated order, a light-transmitting base plate (1), a transparent conductive film (2), a first conductive layer (5) formed of a base layer (3) and a porous semiconductor layer (4), a power-generating layer (6), and a second conductive layer (8). The second conductive layer (8) is formed of a porous self-supporting sheet that at least contains one or more single-walled carbon nanotubes.

A method for manufacturing a light-emitting device a first solution including a first solvent, quantum dots, a ligand, and a first inorganic precursor, the quantum dots each including a core and a first shell performing first heating of raising to a first temperature or higher, the first temperature being a higher temperature of a melting point of the ligand and a boiling point of the first solvent, and performing second heating of raising to a second temperature, the second temperature being higher than the first temperature and being a temperature at which the first inorganic precursor epitaxially grows and a second shell coating the first shell is formed to form a plurality of first quantum dots, and wherein a plurality of second quantum dots each including, in a core, the same material as a material of the second shells are also formed.

Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

Provided is a method of manufacturing a display device, in which a defective rate of a display substrate is reduced by, prior to main processing, irradiating a laser to a portion of a processing area of a display substrate, and predicting and correcting a location to which the laser is irradiated. The method includes irradiating a first laser to a first irradiation area of a processing area of a display substrate, obtaining a first image of the processing area of the display substrate, calculating a first displacement between a center of the first irradiation area irradiated with the first laser and a center of the processing area by using the first image, determining a second irradiation area to which a second laser is to be irradiated on the display substrate based on the first displacement, and irradiating the second laser to the second irradiation area.

Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.

A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

A manufacturing method of a quantum dot ensemble of the present disclosure is a manufacturing method of a quantum dot ensemble including a plurality of core-shell quantum dots 10A that each includes a core 10B including a compound semiconductor, and a shell 10C including a compound semiconductor and covering the core, and a ligand 10D coordinated to the shell, and the manufacturing method includes mixing a core material, a shell material, and the ligand in a solvent and thereafter performing heating to thereby form the core-shell quantum dots, coordinate the ligand to the shell, and cleave the ligand.

Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.

The invention relates to a photovoltaic module comprising a glass substrate or a substrate made of polymer material and at least two photovoltaic cells, a first photovoltaic cell and a second photovoltaic cell, on said substrate.

A quantum dot film, a method for preparing the same, and a quantum dot light emitting diode are provided. The method for preparing the quantum dot film includes: providing a substrate; and depositing a mixed solution containing a quantum dot and a high molecular polymer onto the substrate, and performing annealing treatment to obtain the quantum dot film. A temperature of the annealing treatment is greater than or equal to a glass transition temperature of the high molecular polymer. The preparation method can make the position of the quantum dot in the quantum dot film rearranged, such that the quantum dot is tightly accumulated and regularly arranged in the high molecular polymer, whereby forming a flat quantum dot film. The quantum dot film obtained from the preparation method, when applied to the quantum dot light emitting device, can significantly improve the electro-optical efficiency and lifespan of the device.