A process of producing a radiation-emitting organic-electronic device having a first and a second electrode layer and an emitter layer includes: A) providing a phosphorescent emitter with an anisotropic molecule structure and a matrix material, B) applying the first electrode layer to a substrate, C) applying the emitter layer under thermodynamic control, with vaporization of the phosphorescent emitter and of the matrix material under reduced pressure and deposition thereof on the first electrode layer such that molecules of the phosphorescent emitter are in anisotropic alignment, and D) applying the second electrode layer on the emitter layer.

A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

The present invention relates to a process for producing a layer of a crystalline material, which process comprises disposing on a substrate: a first precursor compound comprising a first cation and a sacrificial anion, which first cation is a metal or metalloid cation and which sacrificial anion comprises two or more atoms; and a second precursor compound comprising a second anion and a second cation, which second cation can together with the sacrificial anion form a first volatile compound. The invention also relates to a layer of a crystalline material obtainable by a process according to the invention. The invention also provides a process for producing a semiconductor device comprising a process for producing a layer of a crystalline material according to the invention. The invention also provides a composition comprising: (a) a solvent; (b) NH.sub.4X; (c) AX; and (d) BY.sub.2 or MY.sub.4; wherein X, A, M and Y are as defined herein.

A light-emitting device includes a carrier, an organic layer sequence arranged on the carrier and having at least one emitter layer containing a light-emitting material configured to emit light of a first wavelength range, a first electrode and a second electrode, and a multiplicity of nanostructures, wherein the nanostructures have a refractive index smaller than a refractive index of the light-emitting material of the emitter layer and at least some of the nanostructures project into the emitter layer or pierce through the emitter layer.

A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB.sub.(1-u)C.sub.(u)[X.sub.(1-v)Y.sub.(v)].sub.3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn.sup.2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

The present disclosure provides a condensing plate. The condensing plate comprises a body. The body comprises a first face and a second face opposite to the first face. The first face is provided with a condensing part and a solvent storage structure. The solvent storage structure is configured to store a solvent and release, along a direction away from the second face, gas formed by the solvent after evaporation.

To provide a film-forming ink and a film formation method, capable of making the dimensional accuracy of a film to be formed excellent by increasing the apparent liquid droplet amount of a film-forming ink to be supplied as a liquid droplet into an opening part included in a partition wall, and also to provide a device with a film and an electronic apparatus, each of which has a film formed using the film formation method. A film-forming ink of the invention includes a film-forming material and a liquid medium in which the film-forming material is dissolved or dispersed, wherein the liquid medium contains a first component which has a boiling point at an atmospheric pressure of 200° C. or higher and a second component which has a boiling point at an atmospheric pressure lower than the first component.

A method is described for applying an organic semiconductor layer based on epindolidione to a carrier. In order to provide advantageous production conditions it is proposed that the epindolidione is first reacted with tert-butyloxycarbonyl as protective group to give tert-butyloxycarbonyl epindolidione and then dissolved in a solvent before the dissolved tert-butyloxycarbonyl epindolidione is applied to the carrier, and that the solvent then be evaporated and the tert-butyloxycarbonyl protective group be detached again.

A perovskite ink is provided. The perovskite ink comprises a first polar solvent. The first polar solvent has a boiling point of 150° C. or more and a melting point of 30° C. or less. The perovskite ink further comprises a first light emitting perovskite material mixed in the first polar solvent at a concentration in the range of 0.01 wt. % to 10 wt. %.

A perovskite organic light-emitting diode and a preparing method thereof are provided. The perovskite organic light-emitting diode comprises an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer. The hole transport layer, the light-emitting layer and the electron transport layer are prepared by solution processing. Every film layer is prepared by solution spin coating and dried, thereby the whole preparing process is simple, material utilization rate is high and luminous performance of the device is excellent.