A perovskite solar cell, a preparation method therefor and a power consuming device are provided. In some embodiments, the perovskite solar cell of the present application has, in order, a back electrode, a hole transport layer, an interface passivation layer, a perovskite layer, an interface passivation layer, an electron transport layer, and conductive glass, wherein the HOMO energy level of an interface between the perovskite layer and the interface passivation layer is 0.01-0.4 eV, and the energy band gap between the HOMO energy level and the LUMO energy level is 0.01-0.4 eV; and the interface passivation layer contains: an organic amine salt of a biphenyl compound and/or an organic amine salt of an acene compound. In the perovskite solar cell according to the present application, by passivating the perovskite layer therein with an organic amine salt of a biphenyl compound or acene compound, the VBM of the perovskite layer is improved, facilitating the extraction of holes, and the transport efficiency of carriers is improved, so that the efficiency and stability of the perovskite solar cell can be greatly improved.

A perovskite solar cell, a preparation method therefor and a power consuming device are provided. In some embodiments, the perovskite solar cell of the present application has, in order, a back electrode, a hole transport layer, an interface passivation layer, a perovskite layer, an interface passivation layer, an electron transport layer, and conductive glass, wherein the HOMO energy level of an interface between the perovskite layer and the interface passivation layer is 0.01-0.4 eV, and the energy band gap between the HOMO energy level and the LUMO energy level is 0.01-0.4 eV; and the interface passivation layer contains: an organic amine salt of a biphenyl compound and/or an organic amine salt of an acene compound. In the perovskite solar cell according to the present application, by passivating the perovskite layer therein with an organic amine salt of a biphenyl compound or acene compound, the VBM of the perovskite layer is improved, facilitating the extraction of holes, and the transport efficiency of carriers is improved, so that the efficiency and stability of the perovskite solar cell can be greatly improved.

Heat resistance is improved.

A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, and a dispersive energy Hansen solubility parameter δD(P) of the at least one p-type semiconductor material and a first dispersive energy Hansen solubility parameter δD(Ni) and a second dispersive energy Hansen solubility parameter δD(Nii) of the at least two n-type semiconductor materials satisfy the following requirements (i) and (ii):

2.1 MPa.sup.0.5<|δD(P)−δD(Ni)|+|δD(Ni)−δD(Nii)|<4.0 MPa.sup.0.5  Requirement (i):

0.8 MPa.sup.0.5<|δD(P)−δD(Ni)| and 0.2 MPa.sup.0.5<|δD(Ni)−δD(Nii)|  Requirement (ii):

Heat resistance is improved.

A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, and a dispersive energy Hansen solubility parameter δD(P) of the at least one p-type semiconductor material and a first dispersive energy Hansen solubility parameter δD(Ni) and a second dispersive energy Hansen solubility parameter δD(Nii) of the at least two n-type semiconductor materials satisfy the following requirements (i) and (ii):

2.1 MPa.sup.0.5<|δD(P)−δD(Ni)|+|δD(Ni)−δD(Nii)|<4.0 MPa.sup.0.5  Requirement (i):

0.8 MPa.sup.0.5<|δD(P)−δD(Ni)| and 0.2 MPa.sup.0.5<|δD(Ni)−δD(Nii)|  Requirement (ii):

The present disclosure provides a perovskite solar cell comprising at least an electrode, an electron transport layer, a hole transport layer, a perovskite layer and a passivation layer. In the perovskite solar cell, the passivation layer may contain a passivator, the passivatormay comprise an aza fused bicyclic compound and/or an organic salt formed from the aza fused bicyclic compound and an acid, each fused ring in the aza fused bicyclic compound may be independently a five-membered or six-membered saturated ring, unsaturated ring or aromatic ring, the fused ring of the aza fused bicyclic compound may contain 1-5 nitrogen atoms, and the fused ring may be an unsubstituted ring or a ring substituted with one or two substituents having 1-3 carbon atoms.

The present disclosure provides a perovskite solar cell comprising at least an electrode, an electron transport layer, a hole transport layer, a perovskite layer and a passivation layer. In the perovskite solar cell, the passivation layer may contain a passivator, the passivatormay comprise an aza fused bicyclic compound and/or an organic salt formed from the aza fused bicyclic compound and an acid, each fused ring in the aza fused bicyclic compound may be independently a five-membered or six-membered saturated ring, unsaturated ring or aromatic ring, the fused ring of the aza fused bicyclic compound may contain 1-5 nitrogen atoms, and the fused ring may be an unsubstituted ring or a ring substituted with one or two substituents having 1-3 carbon atoms.

Methods of passivating a surface. The methods may include providing a mixture including a liquid and a derivative of quinacridone, applying the mixture to a first surface of a film that includes a metal halide perovskite, and annealing the film for a time and a temperature effective to convert the derivative of quinacridone to quinacridone. Composite materials and electronic devices also are provided.

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

A method of fabricating a display device may include forming a preliminary first pixel definition layer by coating a first material on a base substrate including a first electrode, forming a first pixel definition layer by forming a first opening in the preliminary first pixel definition layer, the first opening exposing the first electrode, performing a plasma treatment on the first pixel definition layer, forming a preliminary organic layer by providing a first organic material, forming a preliminary second pixel definition layer by coating a second material on the first pixel definition layer, forming a second pixel definition layer by forming a second opening in the preliminary second pixel definition layer, the second opening overlapping with the first opening, and forming an organic layer by providing a second organic material. A thickness of the organic layer may be greater than a thickness of the preliminary organic layer.