A method of fabricating a display device may include forming a preliminary first pixel definition layer by coating a first material on a base substrate including a first electrode, forming a first pixel definition layer by forming a first opening in the preliminary first pixel definition layer, the first opening exposing the first electrode, performing a plasma treatment on the first pixel definition layer, forming a preliminary organic layer by providing a first organic material, forming a preliminary second pixel definition layer by coating a second material on the first pixel definition layer, forming a second pixel definition layer by forming a second opening in the preliminary second pixel definition layer, the second opening overlapping with the first opening, and forming an organic layer by providing a second organic material. A thickness of the organic layer may be greater than a thickness of the preliminary organic layer.

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Small organic molecule semi-conducting chromophores containing a halogen-substituted core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a bismuth halide precursor ink. Preparing a bismuth halide precursor ink comprises the steps of introducing a bismuth halide into a vessel; introducing a first solvent to the vessel; and contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink; depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a bismuth halide precursor ink. Preparing a bismuth halide precursor ink comprises the steps of introducing a bismuth halide into a vessel; introducing a first solvent to the vessel; and contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink; depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

A method for manufacturing a display panel including a display area, a hole area and a transition area between the display area and the hole area. The method includes: providing a semi-finished product of the display panel, including a substrate and a partition ring disposed around the hole area; forming a desorption layer on the surface of the substrate and in the hole area; forming a luminescent structure layer in the display area and the transition area on the side of the substrate, and a luminescent structure layer on the surface of the desorption layer away from the substrate and in the hole area, a portion of the luminescent structure layer in the transition area being partitioned by the partition ring; sublimating the material of the desorption layer to remove a portion of the luminescent structure layer in the hole area.

A method for manufacturing a display panel including a display area, a hole area and a transition area between the display area and the hole area. The method includes: providing a semi-finished product of the display panel, including a substrate and a partition ring disposed around the hole area; forming a desorption layer on the surface of the substrate and in the hole area; forming a luminescent structure layer in the display area and the transition area on the side of the substrate, and a luminescent structure layer on the surface of the desorption layer away from the substrate and in the hole area, a portion of the luminescent structure layer in the transition area being partitioned by the partition ring; sublimating the material of the desorption layer to remove a portion of the luminescent structure layer in the hole area.

A tandem cell and a manufacturing method thereof are provided in the present disclosure, so as to improve hole transmission performance of the tandem cell. The tandem cell includes a bottom cell, a hole transporting layer formed on the bottom cell, a perovskite absorbing layer formed on the hole transporting layer, and a transparent conducting layer formed above the perovskite absorbing layer. A material of the hole transporting layer includes a semiconductor material with a p-type delafossite structure, and a valence band top energy level of the hole transporting layer sequentially decreases in a direction away from the bottom cell, which has dual functions of carrier transport and carrier recombination, so as to simplify a cell structure and optimize the photoelectric conversion efficiency. The tandem cell and the manufacturing method thereof according to the present disclosure are used for manufacturing the tandem cell.