Described are concepts, systems, circuits, devices, structures and methods for depositing carbon nanotubes (CNTs) uniformly over a substrate. The described concepts, systems, circuits, devices, structures and methods meet at least several requirements; namely, the systems, circuits, devices, structures are: (1) manufacturable; (2) silicon-CMOS compatible; and (3) provide a path for realizing energy efficiency benefits utilizing silicon. In embodiments, described is an illustrative CNT solution-based deposition technique that addresses all of these requirements. Also described is a method for providing carbon nanotube field effect transistors (CNFETs) using uniform and reproducible fabrication techniques suitable for use across industry-standard wafers and which may use the same equipment currently being used to fabricate silicon product wafers. Also described are CNFETs fabricated within commercial silicon manufacturing facilities and having wafer-scale uniformity and reproducibility across multiple wafers.

Disclosed is a perovskite precursor solution for improving stability of a perovskite solar cell. Iodoformamidine and cesium iodide are added into a solvent, and bromomethylamine, lead iodide and 3,4-dichloroaniline are added after stirring to obtain the perovskite precursor solution. The perovskite precursor solution is spin-coated on a substrate, obtaining a perovskite thin film by thermal annealing as a light absorption layer of the solar cell. The perovskite precursor solution prepared by the present invention replaces an existing perovskite layer, the defects in the existing perovskite mineralization technology are solved. The perovskite stability improvement leads lower requirements for the process environment and convenient preparation method, realizes the long-time stable performance in a common environment.

A method for preparing three-dimensional perovskite nanopixels of a digital display is provided. The method includes steps of preparing precursor ink by mixing methylammonium halide and lead halide and adding them into another mixture, adding the precursor ink into a nanopipette, placing the nanopipette with the precursor ink above a silicon substrate and apart from the silicon substrate by a certain distance, configuring the nanopipette to come into contact with the Si substrate such that a portion of the precursor ink having an interface surface of a shape of a meniscus is formed between the nanopipette and the silicon substrate, performing rapid evaporation of the portion of the precursor ink to facilitate crystallization of perovskite, moving the nanopipette upwardly at a constant speed such that the crystallization of perovskite proceeds upwardly, and terminating the crystallization of perovskite to generate a freestanding nanopixel for emitting light.

A method for preparing three-dimensional perovskite nanopixels of a digital display is provided. The method includes steps of preparing precursor ink by mixing methylammonium halide and lead halide and adding them into another mixture, adding the precursor ink into a nanopipette, placing the nanopipette with the precursor ink above a silicon substrate and apart from the silicon substrate by a certain distance, configuring the nanopipette to come into contact with the Si substrate such that a portion of the precursor ink having an interface surface of a shape of a meniscus is formed between the nanopipette and the silicon substrate, performing rapid evaporation of the portion of the precursor ink to facilitate crystallization of perovskite, moving the nanopipette upwardly at a constant speed such that the crystallization of perovskite proceeds upwardly, and terminating the crystallization of perovskite to generate a freestanding nanopixel for emitting light.

A display device that can easily have high resolution is provided. A display device having both high display quality and high resolution is provided. A display device with high contrast is provided. A first EL film is deposited in contact with a top surface and a side surface of each of a first pixel electrode and a second pixel electrode each having a tapered shape. A first sacrificial film is formed to cover the first EL film. The first sacrificial film and the first EL film are etched to expose the second pixel electrode and form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer, and then, the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching. The first sacrificial layer is removed by wet etching.

A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

The present invention addresses the problem of providing: a luminescent thin film, a luminescent multilayered film, and an organic electroluminescent element that have luminescence properties with excellent storage stability in atmospheric air; and a production method therefor. This luminescent thin film contains a luminescent compound A, and is characterized by containing 0.0001 mass % or more of an oxide B of luminescent compound A in terms of the luminescent compound A.

A dry box and a control method therefor, and a preparation method for an organic electroluminescent device are provided. The dry box includes a cavity and a hot plate arranged in the cavity. The hot plate includes a plurality of heating spots, the plurality of heating spots being arranged towards the hot plate to support a surface of a device to be dried, and some of the temperature of the plurality of heating spots being different and the heating spots being insulated from each other.

Embodiments herein relate to integrating FIVR switching circuitry into a substrate that has a first side and a second side opposite the first side, where the first side of the substrate to electrically couple with a die and to provide voltage to the die and the second side of the substrate is to couple with an input voltage source. In embodiments, the FIVR switching circuitry may be printed onto the substrate using OFET, CNT, or other transistor technology, or may be included in a separate die that is incorporated within the substrate.