An electron barrier film for a quantum dot light-emitting diode, the electron barrier film includes: a compound with a general formula R.sup.1—Si(OR.sup.2).sub.3; or a raw material for forming the electron barrier film includes a compound with the general formula R.sup.1—Si(OR.sup.2).sub.3 one in a group. Not only can a rate of injecting electrons into the luminescent layer be adjusted, so that the number of electron holes in the quantum dot luminescent layer can be equal to the number of electrons in the quantum dot luminescent layer, and a recombination efficiency of the electrons and the electron holes in the luminescent layer is improved, a better interface modification effect can also be achieved, and a surface roughness of the quantum dot luminescent layer is reduced, so that an overall performance of the quantum dot light-emitting diode is more stable.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

A method of depositing a cathode on an organic light emitting diode (OLED) stack is provided. The method includes providing a substrate having at least a partial organic light emitting diode (OLED) stack disposed on a surface of the substrate. The method further includes depositing, on top of the partial OLED stack, a solution comprising a metal compound. The method further includes forming a conductive solid layer from the metal compound in the solution to form a cathode for the partial OLED stack.

The present application provides a preparation method of a charge transport layer, which includes steps of: forming a first film layer by a first solution containing a functional material, forming a second film layer by a second solution containing a charge transport material, the first film layer and the second film layer are in contact with each other, or forming a mixed film layer by a mixed solution of the first solution and the second solution; and removing the functional material to obtain a charge transport layer. The functional material is an organic substance containing an electron-donating group, a surface of the charge transport material has a metal cation dangling bond, and the electron-donating group is capable of being bonded with the metal cation dangling bond.

The present application provides a preparation method of a charge transport layer, which includes steps of: forming a first film layer by a first solution containing a functional material, forming a second film layer by a second solution containing a charge transport material, the first film layer and the second film layer are in contact with each other, or forming a mixed film layer by a mixed solution of the first solution and the second solution; and removing the functional material to obtain a charge transport layer. The functional material is an organic substance containing an electron-donating group, a surface of the charge transport material has a metal cation dangling bond, and the electron-donating group is capable of being bonded with the metal cation dangling bond.

A method of manufacturing an electroluminescence element according to an embodiment of the present invention includes forming a first electrode on a substrate, forming a first electron transport layer in contact with the first electrode, forming a first insulating layer having an opening in a region overlapping with the first electrode, forming a second electron transport layer includes metal oxide semiconductor by applying a composition to the opening and removing a solvent after application, forming a light emitting layer overlapping with the second electron transport layer, the light emitting layer containing an electroluminescent material, forming a second electrode in a region overlapping with the light emitting layer.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.

[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Organic Light-Emitting Device An organic light-emitting device (100) comprising an anode (103); a cathode (109); a light-emitting layer (107) between the anode and the cathode; and a hole-transporting layer (105) between the anode and the cathode, wherein the light-emitting layer comprises a light-emitting compound of formula (I) and the hole-transporting layer comprises a hole-transporting material having a HOMO level that is no more than 5.1 e V from vacuum level: N N ML x R 2 (R) m (R) n y (I) wherein: R in each occurrence is independently a substituent; R 2 is H or a substituent; m is 0, 1 or 2; n is 0, 1, 2, 3 or 4; M is a transition metal; L is a ligand; y is at least 1; and x is 0 or a positive integer.