An organic light-entitling display panel and a manufacturing method thereof are provided. The organic light-emitting display panel includes a substrate, a first electrode, a pixel definition layer with openings to expose a part of the first electrode. A fence structure, including a plurality of fences arranged in parallel to each other and to the substrate, is formed on the first electrode within the openings. A light-emitting functional layer and a second electrode are deposited in sequence on the fence structure by using a slanted evaporation method that results in a thickness distribution of the second electrode that the thickness on the top of the fences is greater than the thickness between each fences.

A display panel having a pixel defining layer defining subpixel apertures of subpixels is provided. The pixel defining layer is a unitary structure including column portions and row portions. A respective row portion is between two adjacent subpixel apertures that are in a same column and respectively from two adjacent rows. A respective column portion is in a space between two adjacent columns of subpixel apertures, spacing apart multiple pairs of adjacent row portions respectively in multiple rows. A respective row portion includes a depression part configured to allow fluid communication of an ink solution between the two adjacent subpixel apertures in the same column and respectively from the two adjacent rows. A minimum height of the depression part relative to a base substrate is less than a minimum height of a column portion adjacent to the respective row portion relative to the base substrate.

A phase-transition optical isomer compound is described, a transparent EL display device including the phase-transition optical isomer compound and a method of fabricating the EL display device, where a phase of the phase-transition optical isomer compound is transited by light irradiation and a second electrode of the EL display device is selectively deposited without a masking process.

A phase-transition optical isomer compound is described, a transparent EL display device including the phase-transition optical isomer compound and a method of fabricating the EL display device, where a phase of the phase-transition optical isomer compound is transited by light irradiation and a second electrode of the EL display device is selectively deposited without a masking process.

An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

In a method for manufacturing conductive polymer electrode by using drop casting, a conductive material is dispersed in a solution, to form a first mixing solution. A first polymer is added and dispersed to the first mixing solution, to form a second mixing solution. A second polymer solution is added and dispersed to the second mixing solution, to form a third mixing solution. The third mixing solution is dropped on a hot plate using a pipette and a solution of the third mixing solution is evaporated, to form a conductive polymer. The adhesive patch is formed. The adhesive patch is attached to the conductive polymer.