An OLED panel includes a light emitting substrate and a color filter substrate. The light-emitting substrate includes a multi-layer OLED film emitting white light. The color filter substrate includes a color filter array, a conductive layer that is electrically connected to a wall-shaped elastic conductor that is wearing a metal cap. The two substrates are laminated together in a manner that the metal cap is in direct contact with cathode electrode of the OLED at the site of pixel definition layer. The total resistance of the cathode layer of the OLED is therefore reduced significantly, and voltage-drop on cathode and associated image artifacts are minimized.

A display device includes an auxiliary wire, a connection pattern, a light emitting layer, an upper common layer, and an upper electrode. The display device includes a sub-pixel region and a contact region. The auxiliary wire is disposed on a substrate in the contact region. The connection pattern is disposed on the auxiliary wire. The light emitting layer is disposed on the substrate in the sub-pixel region. The upper common layer is disposed on the light emitting layer and the connection pattern, and includes openings that expose the connection pattern. The upper electrode is disposed on the upper common layer and contacts the connection pattern by passing through the openings.

The present application relates to an organic electronic device, said electronic device comprising a multi-layer electrode as well as an organic semiconducting layer, as well as to a method for producing such organic electronic device.

A top emission organic EL element includes a substrate, an insulating layer including a hole portion, a lower electrode, a light emitting layer, a bank surrounding the lower electrode and the light emitting layer, and an upper transparent electrode. The insulating layer, the lower electrode, the light emitting layer, the bank, and the upper transparent electrode are disposed above the substrate. The bank is arranged on the insulating layer so as to surround the hole portion. The lower electrode is configured to cover an inner side of the hole portion and an area, where the bank is not arranged, of an upper surface of the insulating layer, and a thickness at a center area of the lower electrode is 150 nm or more.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.−1.Math.s.sup.−1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.−1.Math.s.sup.−1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.

A display device that can easily have high resolution is provided. A display device having both high display quality and high resolution is provided. A display device with high contrast is provided. A first EL film is deposited in contact with a top surface and a side surface of each of a first pixel electrode and a second pixel electrode each having a tapered shape. A first sacrificial film is formed to cover the first EL film. The first sacrificial film and the first EL film are etched to expose the second pixel electrode and form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer, and then, the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching. The first sacrificial layer is removed by wet etching.

The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).

A method for depositing a conductive coating on a surface is provided, the method including treating the surface by depositing fullerene on the surface to produce a treated surface and depositing the conductive coating on the treated surface. The conductive coating generally includes magnesium. A product and an organic optoelectronic device produced according to the method are also provided.

The embodiments provide a process and an apparatus for easily producing a transparent electrode of low resistance and of high transparency. The process comprises: coating a hydrophobic polymer film with a dispersion of metal nanowires, press-bonding an electroconductive substrate directly onto the metal nanowires on the polymer film, and peeling and transferring the metal nanowires from the polymer film onto the conductive substrate. The embodiments also relates to an apparatus for the process.