Systems and methods for transparent organic photovoltaic devices are provided. In one embodiment, an organic semiconductor device comprises: a first glass sheet comprising a first ultra-thin flexible glass material; at least one transparent organic photovoltaic cell bound to the first glass sheet; and a second glass sheet applied to the at least one organic photovoltaic cell, wherein the at least one transparent organic photovoltaic cell is positioned between the first glass sheet and the second glass sheet.

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Disclosed are a preparation method of a display panel, a display panel and a displaying device. The display panel comprises a plurality of first-color subpixels, and each first-color subpixel comprises a base, the base comprising a first driving electrode and a second driving electrode; a flat layer disposed on the side, near the first driving electrode and the second driving electrode, of the base; a patterned passivation layer and at least one first electrode disposed on the side, away from the base, of the flat layer, the first electrode being connected with the first driving electrode through via holes penetrating the flat layer; and at least one second electrode disposed on the side, away from the base, of the passivation layer, the second electrode being connected with the second driving electrode through via holes penetrating the passivation layer and the flat layer.

A method for manufacturing an electroconductive pattern 40, provided with: a lamination step for laminating an acid generation film 10 containing an acid proliferation agent and a photoacid generator on a polymer film 20 containing an electroconductive polymer formed on a substrate 21; a masking step for masking the top of the acid generation film 10; a light irradiation step for irradiating the laminate from the acid-generation-film 10 side; a doping step for doping the electroconductive polymer with an acid generated and proliferated in the acid generation film 10 by the light irradiation; and a releasing step for releasing the acid generation film 10 from the polymer film 20. This method makes it possible to provide an electroconductive film and a method for manufacturing an electroconductive pattern in which photoacid generation and acid proliferation effects are utilized.

The present invention discloses a pixel unit, a method of manufacturing the same and a display device. The pixel unit comprises an anode layer, a pixel definition layer, an organic light-emitting layer and a cathode layer, wherein the anode layer includes a plurality of pixel anodes in an array arrangement, and the pixel definition layer is disposed on the anode layer and includes a plurality of spaced pixel definition units, wherein the pixel definition units correspond to the pixel anodes one by one, and each pixel definition unit delimits a light-emitting region on the corresponding pixel anode, and the organic light-emitting layer is provided within the light-emitting regions, and the cathode layer is provided on the organic light-emitting layer. The present invention remarkably increases light extraction efficiency by improving the structure of the pixel unit.

The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.

The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

Embodiments of the invention include a method of fabrication of a semiconductor structure. The method of fabrication includes: Forming a trench in a first dielectric material down to a first conductive material of a bottom gate. A sidewall of the trench contacts a top surface of the first conductive material. Depositing a second conductive material on the sidewall of the trench, which forms an electrical connection with the first conductive material. Depositing a second dielectric material in the trench, and on the second conductive material. Depositing a gate dielectric material on the second conductive material and the dielectric materials. Forming a channel material on the gate dielectric material. Depositing another conductive material on the channel material and portions of the gate dielectric material to form a source terminal and a drain terminal.

A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

The invention relates to a method for manufacturing an optoelectronic component substrate (12) comprising a stack of layers, the method comprising a step of: preforming a substrate (12) comprising a face which has a pattern with at least one zone made of a first material and one zone made of a second material, the two materials being thermosetting or thermoplastic materials, the first material being an electrically conductive material and the second material being an electrically insulating material, and molding by compression the face of the substrate (12) with a face of a reference element (22) having a surface roughness less than or equal to 50 nanometers.