The aim is to improve the bending resistance a display device. The display device in one embodiment includes a substrate including a first surface and a second surface and a curved part between the first surface and the second surface, a display element arranged on the first surface, a conducting layer connected with the display element and extending to the second surface from the first surface via the curved part, a plurality of protective layers having a lower ductility than the substrate and arranged in the substrate side and/or opposite side to the substrate side with respect to the conducting layer and along the curved part, wherein each of the plurality of protective layers spreading over the curved part, to a certain region of the first surface side from the curved part, and to a certain region of the second side from the curved part.

A flexible display and a method of manufacturing the same are disclosed. In one aspect, the method includes forming a sacrificial layer on a support substrate, wherein the sacrificial layer includes a plurality of patterns continuously formed thereon and a plurality of grooves formed between the patterns. The method also includes forming a display unit on the sacrificial layer, dissolving and removing the sacrificial layer with water and separating the display unit from the support substrate.

The present invention is a substrate for a display, the substrate having a film B including a polysiloxane resin on at least one surface of a film A including a polyimide resin, wherein the film B contains inorganic oxide particles therein, and the present invention has an object to provide a substrate for a display: being able to be applied to a color filter, an organic EL element, or the like without the need to carry out any complex operations; allowing high-definition displays to be manufactured; and being provided with a low CTE, a low birefringence, and flexibility.

An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.

A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

A window module includes a window, a first protective film disposed on a first surface of the window, and a second protective film disposed on a second surface opposite to the first surface of the window. A first release force of the first protective film with respect to the window is greater than a second release force of the second protective film with respect to the window.

A flexible display panel and a manufacturing method thereof are disclosed. The method includes: forming a photodeformable layer on a carrier board; forming a flexible substrate on a side of the photodeformable layer away from the carrier board; forming a light-emitting device layer on a side of the flexible substrate away from the photodeformable layer; and irradiating the photodeformable layer with light having a predetermined wavelength until the photodeformable layer is deformed and is separated from the carrier board, thereby obtaining the flexible display panel.

To provide a highly flexible display device excellent in mass-productivity. A display device includes a flexible substrate, an adhesive layer over the substrate, a resin layer over the adhesive layer, an inorganic insulating layer over the resin layer, a transistor over the inorganic insulating layer, and a display element electrically connected to the transistor. The transistor includes an oxide semiconductor in a channel formation region. The resin layer includes sulfur.

To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.