A perovskite material bypass diode and a manufacturing method therefor, a perovskite solar cell module and a manufacturing method therefor, and a photovoltaic module are disclosed by the present application, which relate to the technical field of photovoltaics, the difficulty of manufacturing the perovskite material bypass diode is reduced. The method for manufacturing the perovskite material bypass diode includes: providing a layer of a perovskite material layer, processing the perovskite material layer to form a P-type perovskite material region and an N-type perovskite material region, so that a perovskite material bypass diode is formed. The perovskite material bypass diode and the manufacturing method therefor, the perovskite solar cell module and the manufacturing method therefor, and the photovoltaic module provided by the present application are used to manufacture the photovoltaic module.

Provided is a coating apparatus including: a stage unit which floats the substrate to a predetermined height by using wind pressure of gas; a droplet discharge unit which drops the droplet of the functional liquid on the substrate floated to the predetermined height from the stage unit; a main scanning direction moving unit which moves the substrate, which is floated to the predetermined height from the stage unit, in the main scanning direction while holding the substrate; and a sub-scanning direction moving unit which moves the droplet discharge unit in the sub-scanning direction with respect to the substrate floated to the predetermined height from the stage unit. The sub-scanning direction moving unit moves the droplet discharge unit in the sub-scanning direction while the main scanning direction moving unit repeatedly moves the substrate in the main scanning direction and the droplet discharge unit repeatedly drops the droplet.

A method for producing an organic EL device having an anode, a cathode, at least one organic functional layer disposed between the anode and the cathode, and a sealing layer, comprising

a step of forming the anode, a step of forming the cathode, a step of forming the at least one organic functional layer and a step of forming the sealing layer,

wherein the average concentration: A (ppm) of a sulfur oxide to which the organic EL device during production is exposed from initiation time of the step of forming the at least one organic functional layer until termination time of the step of forming the sealing layer and the exposure time thereof: B (sec) satisfy the formula (1-1):

0?A?B<2.2 (1-1).

A method for producing an organic EL device having an anode, a cathode, at least one organic functional layer disposed between the anode and the cathode, and a sealing layer, comprising a step of forming the anode, a step of forming the cathode, a step of forming the at least one organic functional layer and a step of forming the sealing layer, wherein the average concentration: A (ppm) of a nitrogen oxide to which the organic EL device during production is exposed from initiation time of the step of forming the at least one organic functional layer until termination time of the step of forming the sealing layer and the exposure time thereof: B (sec) satisfy the formula (1-1):

0?A?B<12(1-1).

A method for producing an organic EL device having an anode, a cathode, at least one organic functional layer disposed between the anode and the cathode, and a sealing layer, comprising

a step of forming the anode, a step of forming the cathode, a step of forming the at least one organic functional layer and a step of forming the sealing layer,

wherein the average concentration: A (ppm) of ammonia to which the organic EL device during production is exposed from initiation time of the step of forming the at least one organic functional layer until termination time of the step of forming the sealing layer and the exposure time thereof: B (sec) satisfy the formula (1-1):

0?A?B?105 (1-1).

A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.

An ink printing process employs per-nozzle droplet volume measurement and processing software that plans droplet combinations to reach specific aggregate ink fills per target region, guaranteeing compliance with minimum and maximum ink fills set by specification. In various embodiments, different droplet combinations are produced through different printhead/substrate scan offsets, offsets between printheads, the use of different nozzle drive waveforms, and/or other techniques. These combinations can be based on repeated, rapid droplet measurements that develop understandings for each nozzle of means and spreads for expected droplet volume, velocity and trajectory, with combinations of droplets being planned based on these statistical parameters. Optionally, random fill variation can be introduced so as to mitigate Mura effects in a finished display device. The disclosed techniques have many possible applications.

A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.

The disclosed in the present disclosure is an evaporation equipment and an evaporating method. The evaporation equipment may include: a support, which is arranged for loading a substrate to be evaporated; and a zone temperature controlling device, which includes at least two temperature controlling parts and at least one temperature controlling device. A loading surface of the support may include a plurality of zones, and each of the plurality of zones may correspond to an evaporation region of the substrate to be evaporated. And each of the plurality of zones may be arranged with a temperature controlling part, and the temperature controlling device may be configured to control temperatures provided by the temperature controlling parts, so as to control corresponding deposition rates of film coating on the evaporation regions.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.