A method for manufacturing a light-emitting element, in particular, a method for manufacturing a light-emitting element with high emission efficiency is provided. In the method for manufacturing a light-emitting element that includes a light-emitting layer containing a host material and a light-emitting material that is an organic compound or an organic metal complex, the light-emitting layer is formed by co-evaporation of the light-emitting material and the host material, and the light-emitting layer is deposited by co-evaporation while the percentage of the partial pressure of carbon dioxide with respect to the total pressure in an evaporation chamber for the co-evaporation is kept higher than that in the air.

A method for removing oxygen from an oxygen adduct of anthracene, which is generated by irradiation with ultraviolet rays, is provided. Alternatively a method for manufacturing an electronic device or a display device with favorable reliability is provided. A method for manufacturing an electronic device, including a step of irradiating a layer including an organic compound including an anthracene structure with ultraviolet rays at an energy density higher than or equal to 1 mJ/cm.sup.2 and lower than or equal to 1000 mJ/cm.sup.2 in an atmosphere where oxygen exists and a step of performing heating at a temperature higher than or equal to 80 C. in an atmosphere with an oxygen concentration lower than or equal to 300 ppm is provided.

A method comprises processing a substrate in a gas enclosure to form a film on one or more portions of the substrate. The method further comprises, while processing the substrate, circulating gas along a circulation path through the gas enclosure. Circulating the gas may comprise flowing gas through an exhaust housing enclosing a printhead assembly housed in the gas enclosure and filtering the gas flowing downstream of the printhead assembly from the exhaust housing.

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.

The present disclosure relates to a method for making nanoscale heterostructure. The method includes: forming a first carbon nanotube layer on a support, the first carbon nanotube layer includes a number of first carbon nanotubes; forming a semiconductor layer on a surface of the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, the second carbon nanotube layer includes a number of second carbon nanotubes; finding and labeling a first metal carbon nanotube and a semiconductor carbon nanotube parallel to and spaced away from the first metal carbon nanotube; finding and labeling a second metal carbon nanotube, an extending direction of the second metal carbon nanotube is crossed with an extending direction of the first metal carbon nanotube and the semiconductor carbon nanotube; removing the other carbon nanotubes; and annealing the above structure.

Methods and devices for controlling pressures in microenvironments between a deposition apparatus and a substrate are provided. Each microenvironment is associated with an aperture of the deposition apparatus which can allow for control of the microenvironment.

A cover glass bonding method includes: aligning each wafer of a set of organic light-emitting diode on silicon (OLEDoS) wafers and disposing the set of OLEDoS wafers on an upper table vacuum assembly system (VAS) module of a VAS device without using a carrier glass; disposing an epoxy-drawn cover glass on a lower table VAS module of the VAS device; bonding the set of OLEDoS wafers and the epoxy-drawn cover glass, wherein a working position of each wafer of the set of OLEDoS wafers is individually controlled in the upper table VAS module of the VAS device.

A method of producing a light emitting device which exhibits excellent light emission efficiency is provided. The light emitting device contains an anode, a cathode, a light emitting layer disposed between the anode and the cathode, and an encapsulating layer, and the method involves forming the light emitting layer by an application method using an iridium complex having an iridium atom as the central metal, forming the anode or the cathode, and forming the encapsulating layer. For the whole process, from initiation of the formation of the light emitting layer to completion of the formation of the encapsulating layer, during which the light emitting device in production is exposed to ozone, the average value of the ozone concentration: A ppb and the time interval: B min satisfy the formula: 0AB1000.

The present invention discloses a display panel, a manufacturing method thereof and a display device. The display panel comprises a first substrate divided into a display area and a non-display area surrounding the display area, a plurality of sub-pixel units are provided on a part of the first substrate corresponding to the display area, a photo spacer is provided between two adjacent sub-pixel units and comprises a base and a plurality of protruding structures provided on the base, and the base is made from material including In+ ions which are replaceable with H+ ions. For the display panel, the photo spacers are manufactured using Haze phenomenon generated by contacting ITO thin film with ionized H.sub.2, so as to provide support between the encapsulation substrate and the evaporated substrate encapsulated by frit seal and effectively protect the OLED devices from damage, and therefore, the display panel has better performance.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.