A method is used to produced an organic thin-film solar cell that includes a substrate and an anode, an organic thin-film layer including an organic semiconductor layer, and a cathode layered on top of the substrate. The method includes forming a particle monolayer film that includes a mixture of particles of different average particle sizes on a surface of an original plate for a mold, dry etching using the particle monolayer film as an etching mask to form a recess and protrusion-shaped microstructure, producing a transfer member in which the microstructure is inverted, layering at least the anode and the organic thin-film layer on top of the substrate, transferring the microstructure or the inverted microstructure to a surface of the organic thin-film layer by pressing the mold or the transfer member thereon, and layering the cathode on top of the organic thin-film layer.

A method for manufacturing a display panel includes forming a circuit element layer including a transistor on a plurality of cell areas of a first working substrate. Each of the cell areas includes a hole area on which at least one first sub-opening groove on which the circuit element layer is not formed is located. The method further includes forming a display element layer including a light emitting element on the plurality of cell areas, removing at least one inorganic layer of the display element layer formed in the first sub-opening groove by stamping to define a second sub-opening groove, coupling the first working substrate to a second working substrate to define a working panel, and cutting the working panel into portions corresponding to the plurality of cell areas.

Provided is an organic thin-film solar cell, including: a substrate, an anode, an organic thin-film layer that includes an organic semiconductor layer, and a cathode. The anode, the organic thin-film layer that includes the organic semiconductor layer, and the cathode are layered in order on top of the substrate. A recess and protrusion-shaped microstructure that includes a plurality of recesses or protrusions arranged two-dimensionally at random is formed in an interface between the organic thin-film layer and the cathode. The recess and protrusion-shaped microstructure is formed such that, when .sub.1 and .sub.2 are a shorter wavelength and a longer wavelength, respectively, of wavelengths that produce an absorption edge in a light absorption spectrum of the organic semiconductor layer, and k.sub.1 and k.sub.2 are real parts of propagation constants of surface plasmons that correspond, respectively, to those wavelengths and occur along an interface between the organic semiconductor layer and the cathode, and when the real part k.sub.1 corresponds to an upper wavenumber limit K.sub.1 in a power spectrum of a height distribution of the microstructure formed in the interface between the cathode and the organic semiconductor layer, and the real part k.sub.2 corresponds to a lower wavenumber limit K.sub.2 in the power spectrum of the height distribution of the microstructure formed in the interface between the cathode and the organic semiconductor layer, the power spectrum of the height distribution of the microstructure exhibits determinate values between the upper wavenumber limit K.sub.1 and the lower wavenumber limit K.sub.2, and an integrated value of a spectral intensity of the power spectrum of the height distribution over a wavenumber range from K.sub.1 to K.sub.2 is equal to at least 50% of an integrated value of the spectral intensity of the power spectrum of the height distribution across all wavenumbers.

A semiconductor device and method of fabricating the same are provided. The semiconductor device includes a substrate having a trench and an etching stop layer. The etching stop layer is disposed in the substrate and surrounds the bottom surface and a portion of a sidewall of the trench.

An OLED is provided that includes a substrate; and an anode, a P-type organic semiconductor layer, an N-type organic semiconductor layer, and a cathode that are successively laminated on the substrate. An interface between the P-type organic semiconductor layer and the N-type organic semiconductor layer is a curved surface structure.

Provided is a method for encapsulating a display substrate, including: forming a first barrier wall and a second barrier wall in a peripheral region of the display substrate; and forming inorganic thin-film encapsulation layers and organic thin-film encapsulation layers alternately laminated on the display substrate, all of the organic thin-film encapsulation layers being located in a region surrounded by the first barrier wall, the forming at least one of the inorganic thin-film encapsulation layers comprises: forming the inorganic thin-film encapsulation layer on the display substrate, a portion of the inorganic thin-film encapsulation layer being located between the first barrier wall and the second barrier wall; and disconnecting the portion of the inorganic thin-film encapsulation layer between the first barrier wall and the second barrier wall from the other portions of the inorganic thin-film encapsulation layer, and removing the portion.

A quantum dot color filter substrate, a manufacturing method thereof, and a quantum dot display device are provided. The quantum dot color filter substrate includes a substrate, a color filter layer, a barrier layer, a quantum dot light-emitting layer, a scattering layer, and an encapsulation layer. The quantum dot light-emitting layer includes a plurality of quantum dot light-emitting units and a second black photoresist layer, wherein, the side surfaces of the second black photoresist layer adjoining the plurality of quantum dot light-emitting units are inclined surfaces or concave curved surfaces.

A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.

According to the present disclosure, a method of forming a pattern may include forming guide patterns on a substrate, wherein a trench is provided between the guide patterns, forming an organic-inorganic pattern including organic supramolecular structures in the trench, and annealing the organic-inorganic pattern, thereby aligning the dendrimer structures in parallel with one direction.

A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.