H10K71/841

Display panel and display device

Provided are a display panel and a display device. After deposition of a thin-film transistor layer and a display layer in which emitting devices are disposed, a sensing layer including a piezoelectric material is disposed under the thin-film transistor layer to facilitate implementation of a display panel having built-in piezoelectric devices. Further, as thin-film transistors for ultrasonic sensing and thin-film transistors for display driving are disposed in different layers, a display panel capable of ultrasonic sensing in an active area may be provided without affecting a display resolution or implementation of display pixels.

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Electroluminescent device, and display device comprising thereof

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Stretchable electroluminescent devices

A light emitting capacitor can include a first and second electrode, an electroluminescent layer, and at least one elastomeric layer. The electroluminescent layer, which can include an elastomeric material doped with semiconducting nanoparticles, can be disposed between the first and second electrodes. The elastomeric layer can encapsulate the first electrode, second electrode, and electroluminescent layer. The first and second electrodes can be hydrogel or conductive electrodes. The light emitting capacitor can provide dynamic coloration or sensory feedback. The light emitting capacitor can be used in, for example, robotics, wearables (displays, sensors, textiles), and fashion.

Optoelectronic component, method for manufacturing an optoelectronic component and method for operating an optoelectronic component
11064590 · 2021-07-13 · ·

An optoelectronic component, a method for manufacturing an optoelectronic component and a method for operating an optoelectronic component are disclosed. In an embodiment, the component includes a carrier comprising a molded body and a light-emitting semiconductor body with a first segment and a second segment, wherein the first segment and the second segment are spatially separated from one another, and wherein each segment has an emission side facing away from the carrier. The component further includes a first electrical conductor path arranged on the first segment and on the second segment on a side of the light-emitting semiconductor body facing towards the carrier and a first electrical connecting structure and a second electrical connecting structure, each electrically connecting the first segment and the second segment to one another, wherein the first and second electrical connecting structure are electrically connected to one another by the first electrical conductor path.

OPTOELECTRONIC DEVICE AND METHODS OF USE

Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.

Display Panel and Display Device
20200403045 · 2020-12-24 ·

Provided are a display panel and a display device. After deposition of a thin-film transistor layer and a display layer in which emitting devices are disposed, a sensing layer including a piezoelectric material is disposed under the thin-film transistor layer to facilitate implementation of a display panel having built-in piezoelectric devices. Further, as thin-film transistors for ultrasonic sensing and thin-film transistors for display driving are disposed in different layers, a display panel capable of ultrasonic sensing in an active area may be provided without affecting a display resolution or implementation of display pixels.

Luminous member, method of driving luminous member, non-volatile memory device, sensor, method of driving sensor, and display apparatus

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

ELECTROLUMINESCENT DEVICE, AND DISPLAY DEVICE COMPRISING THEREOF

An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Manufacturing method of OLED display panel with stacks structure

The present disclosure discloses an OLED display panel and a manufacturing method thereof, including: forming a first anode layer on a substrate; forming a conductive layer, a first pixel defining layer and a protective layer covering the conductive layer on the first anode layer; forming a first OLED pixel layer on the first anode layer; forming a first cathode layer on the OLED pixel layer; forming a second anode layer on the first cathode layer; forming a second OLED pixel layer on the second anode layer; and forming a second cathode layer on the second OLED pixel layer. In the above way, the times of the precision mask used in the manufacturing process is greatly reduced, and the space occupied by the stack structure in parallel with the three primary colors is greatly reduced, thereby greatly improving the pixel resolution.