The present invention relates to organic light-emitting devices comprising (a) an anode, (i) a cathode, and (e) an emitting layer between the anode and cathode, comprising 2 to 40% by weight of a triplet emitter X having a difference of the singlet energy (E.sub.S1(X)) and the triplet energy (E.sub.T1(X)) of less than or equal to 0.4 eV [Δ(E.sub.S1(X))−(E.sub.T1(X))≤0.4 eV], 0.05 to 5.0% by weight of a fluorescent emitter Y and 55 to 97.95% by weight of a host compound(s), wherein the amount of the triplet emitter X, the fluorescent emitter Y and the host compound(s) adds up to a total of 100% by weight and the singlet energy of the triplet emitter X (E.sub.S1(X)) is greater than the singlet energy of the fluorescent emitter Y (E.sub.S1(Y)) [(E.sub.S1(X))>E.sub.S1(Y)]. By doping, for example, an emitting layer containing a luminescent organometallic complex having a small S.sub.1-T.sub.1 splitting, with a fluorescent emitter the emission decay time can significantly be shortened without sacrificing external quantum efficiency (EQE) because of very efficient energy transfer.

The present invention relates to organic light-emitting devices comprising (a) an anode, (i) a cathode, and (e) an emitting layer between the anode and cathode, comprising 2 to 40% by weight of a triplet emitter X having a difference of the singlet energy (E.sub.S1(X)) and the triplet energy (E.sub.T1(X)) of less than or equal to 0.4 eV [Δ(E.sub.S1(X))−(E.sub.T1(X))≤0.4 eV], 0.05 to 5.0% by weight of a fluorescent emitter Y and 55 to 97.95% by weight of a host compound(s), wherein the amount of the triplet emitter X, the fluorescent emitter Y and the host compound(s) adds up to a total of 100% by weight and the singlet energy of the triplet emitter X (E.sub.S1(X)) is greater than the singlet energy of the fluorescent emitter Y (E.sub.S1(Y)) [(E.sub.S1(X))>E.sub.S1(Y)]. By doping, for example, an emitting layer containing a luminescent organometallic complex having a small S.sub.1-T.sub.1 splitting, with a fluorescent emitter the emission decay time can significantly be shortened without sacrificing external quantum efficiency (EQE) because of very efficient energy transfer.

A plastic substrate includes: a transparent plastic support member; a first inorganic layer on a surface of the plastic support member; and a first organic-inorganic hybrid layer on the first inorganic layer. A display device includes a display panel and a window on the display panel, the window including the plastic substrate.

A display device and a fabricating method thereof are provided. The display device has a display panel and an optical fingerprint recognition sensor. The display panel has a transparent organic material layer, a barrier layer, a buffer layer, and an array substrate sequentially stacked and disposed from bottom to top. A surface of the transparent organic material layer opposite to the barrier layer is a back surface of the transparent organic material layer. The optical fingerprint recognition sensor is disposed on the back surface of the transparent organic material layer.

Organic devices comprising an organic semiconducting acceptor motif coupled to a donor motif. Examples include IOTIC-2F, ITOTIC-2F, COTIC-4F, and SiOTIC-4F as acceptor materials. The acceptor materials have narrow bandgap (1.1 eV-1.3 eV), strong near-IR absorption and high solar cell EQE in near infrared (IR) region. The acceptor materials may also be used as the absorbing/light sensitive region in an IR photodetector.

There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

The present invention provides an organic light emitting diode (OLED) display panel and a manufacturing method thereof. The display panel includes a display structure and an encapsulation structure, the display structure includes a display region and an edged non-display region surrounding the display region, the display region includes an OLED layer, the encapsulation structure is disposed on the edged non-display region; wherein the encapsulation structure includes a buffer strip connected to the display region and a sealing layer covering the display region and the buffer strip; wherein a surface of the buffer strip has an uneven three-dimensional structure.

A display unit, a display unit manufacturing method, and an organic light emitting diode display device are provided. The display unit includes: a substrate; a thin film transistor layer disposed above the substrate; an anode metal layer disposed above the thin film transistor layer; a pixel definition layer disposed above the anode metal layer; a light emitting structure disposed above the pixel definition layer. The pixel definition layer includes a first lamination layer and a second lamination layer disposed above the first lamination layer. Desiccants are distributed evenly in the second lamination layer.

Provided are carbazole-based host compounds containing a 9-membered ring represented by Formula I

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where the variables are defined herein. Also provided are formulations comprising these carbazole-based hosts compounds. Further provided are OLEDs and related consumer products that utilize these carbazole-based hosts compounds.

A lighting apparatus according to an embodiment of the present invention includes an organic light emitting device including a first electrode, an organic light emitting layer, and a second electrode formed on a first substrate, wherein the first electrode is formed of a transparent conductive material having a resistance of approximately 2800Ω to 5500Ω in each pixel. Thus, even if the resistance of the organic light emitting layer is removed in a pixel due to a contact between the first electrode and the second electrode, overcurrent may be prevented from being applied to the pixel due to the resistance of the first electrode.