A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

A synchronized piezoelectric and luminescence (SPL) material includes a core layer including light-emitting particles and a shell layer which is attached onto a surface of the core layer and includes ligands having a piezoelectric property. Therefore, a piezoelectric property and a luminescent property can be simultaneously implemented using a single SPL material in which piezoelectric ligands and light-emitting particles are chemically coupled.

A trilayer resist system design and method for patterning organic devices including organic light emitting diode (OLED) devices suited for high-definition light field displays. The trilayer resist system is comprised of a fluoropolymer base layer, an inorganic transfer layer and a top positive-type photoresist layer that protects organics formed upon a substrate from damage resulting from the radiation, developers and solvents used in traditional photolithography techniques and thereby resulting in a high-resolution multi-colored OLED array.

The present invention describes diazadibenzofuran or diazadibenzothiophene derivatives substituted by carbazole, fluorene, phenanthrene, benzofuran and/or benzothiophene groups, especially for use in electronic devices. The invention further relates to a process for preparing the compounds of the invention and to electronic devices comprising these.

A display apparatus includes: a first light emitting device arranged in the first display area; a first pixel circuit electrically connected to the first light emitting device; a second light emitting device arranged in the second display area; a second pixel circuit arranged in the peripheral area and electrically connected to the second light emitting device; an organic insulating layer arranged between the second light emitting device and the second pixel circuit; a connection line which electrically connects the second light emitting device and the second pixel circuit to each other and at least a portion of which is arranged in the second display area; and a phase compensation layer arranged in the second display area to overlap the connection line in a plan view, wherein a refractive index of the phase compensation layer is lower than a refractive index of the organic insulating layer.

A light-emitting element includes at least: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole-transport layer between the anode and the light-emitting layer. The hole-transport layer is a film containing a mixture of a hole-transport material and a polysiloxane-based polymer. The light-emitting element further includes: a first electron-transport layer between the light-emitting layer and the cathode; and a second electron-transport layer between the first electron-transport layer and the cathode. A value of a LUMO level of the first electron-transport layer is as high as, or higher than, a value of a LUMO level of the second electron-transport layer, and the value of the LUMO level of the first electron-transport layer is higher than a value of a LUMO level of the light-emitting layer in contact with the first electron-transport layer.

A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):

##STR00001##

wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.

Devices and methods relating stretchable electronics are disclosed. Some disclosed embodiments relate to a stretchable electronic film comprising an insulating polymer and less than 1 wt % of a semiconducting polymer. Other disclosed embodiments relate to manufacturing a multi-layered, stretchable electronic device characterized by a single peel-off step for integrating all components of the device rather than a multi-peel synthesis of the device.

Semiconductor devices comprising: a semiconductor device comprising: a first electrode comprising conductive material, wherein the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite), or wherein the conductive material comprises CVD grown graphene or carbon nanotubes; a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode; an optional insulation layer; a perovskite active layer; a second charge transportation layer; and a second electrode.

Devices and methods relating to stretchable electronics. A stretchable electronic film includes an insulating polymer and less than 1 wt % of a semiconducting polymer. Manufacturing a multi-layered, stretchable electronic device characterized by a single peel-off step for integrating the components of the device rather than a multi-peel synthesis of the device.