Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

An infrared absorbing polymer includes a first structural unit represented by Chemical Formula 1 and a second structural unit including at least one of Chemical Formula 2A to Chemical Formula 2. The infrared absorbing polymer may be included in an infrared absorbing/blocking film, a photoelectric device, a sensor, and an electronic device.

A device includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, an isolation layer over the low-k dielectric layer, and a work function layer over the isolation layer. The work function layer is an n-type work function layer. The device further includes a low-dimensional semiconductor layer on a top surface and a sidewall of the work function layer, source/drain contacts contacting opposing end portions of the low-dimensional semiconductor layer, and a dielectric doping layer over and contacting a channel portion of the low-dimensional semiconductor layer. The dielectric doping layer includes a metal selected from aluminum and hafnium, and the channel portion of the low-dimensional semiconductor layer further comprises the metal.

A method includes depositing a dielectric layer over a substrate, forming carbon nanotubes on the dielectric layer, forming a dummy gate stack on the carbon nanotubes, forming gate spacers on opposing sides of the dummy gate stack, and removing the dummy gate stack to form a trench between the gate spacers. The carbon nanotubes are exposed to the trench. The method further includes etching a portion of the dielectric layer underlying the carbon nanotubes, with the carbon nanotubes being suspended, forming a replacement gate dielectric surrounding the carbon nanotubes, and forming a gate electrode surrounding the replacement gate dielectric.

The present invention relates to the use of compounds for structuring of at least one functional layer of an organic electronic device. The present invention further relates to preferred compounds suitable for use in electronic devices, and to electronic devices, especially organic electroluminescent devices, comprising these compounds.

The present invention relates to the use of compounds for structuring of at least one functional layer of an organic electronic device. The present invention further relates to preferred compounds suitable for use in electronic devices, and to electronic devices, especially organic electroluminescent devices, comprising these compounds.

An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfO.sub.X, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

A display device includes a hole injection layer common to a plurality of light-emitting elements between a light-emitting layer and an anode electrode under the light-emitting layer in the light-emitting element of each pixel. The hole injection layer includes a hole injection section configured to transport positive holes to the light-emitting layer, and a neighboring pixel hole blocking section formed in a portion between the light-emitting elements of adjacent pixels and configured to block transportation of positive holes between the light-emitting elements of the adjacent pixels.

A humidity nonsensitive material based on reduced-graphene oxide (r-GO) and methods of making the same are provided. In an embodiment, the material has a resistance/humidity variation of about −15% to 15% based on different sintering time or temperature. In an aspect, the resistance variation to humidity can be close to zero or −0.5% to 0.5%, showing a humidity non sensitivity property. In an embodiment, a humidity nonsensitive material based on the r-GO and carbon nanotube (CNT) composites is provided, wherein the ratio of CNT to r-GO is adjusted. The ratio can be adjusted based on the combined contribution of carbon nanotube (positive resistance variation) and reduced-graphene oxide (negative resistance variation) behaviors.