A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.

Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, a transparent substrate layer; a titanium dioxide transparent layer, the transparent layer having an index of refraction of 2.35 or greater; and a polycrystalline diamond layer, wherein the transparent layer is between the substrate layer and the polycrystalline diamond layer.

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

Provided is an organic EL device, which shows high luminous efficiency, low voltage, and high driving stability. The organic EL device is an organic electroluminescent device having laminated, on a substrate, an anode, organic layers, and a cathode, wherein at least one layer of the organic layers uses materials including a carborane compound having a carborane ring and a biscarbazole ring, and an indolocarbazole compound having one or two indolocarbazole rings. The carborane compound is represented by the following general formula (1) where H.sub.A represents a carborane ring-containing group.

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An electrode, a perovskite light-emitting diode and a preparing method thereof are provided by using a specific polymer-based surface modifier, PEIE and/or PEI, to modify carbon materials, so as to obtain an electrode with low work function, the electrode as a cathode of a perovskite light-emitting diode is more favorable for electrons injecting into the perovskite light-emitting layer.

The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).

An electroluminescent (EL) device and a method of manufacturing same, and an electronic device. The EL device includes a first electrode, a second electrode, and a functional structural layer disposed between the first electrode and the second electrode. The functional structural layer includes a doping material and a graphene oxide material, and the doping material includes a plurality of conjugated ions.

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.

Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.